Tributylmethylammonium

Tributylmethylammonium

SCHEMBL5570530

CC(C)C(=O)[O-].CCCC[N+](C)(CCCC)CCCC

nearest known ligand 0.47

Full drug profile on Sugi Atlas →

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
CA1 P00915 3/20 0.47
BBOX1 O75936 3/20 0.45
CA2 P00918 2/20 0.41
CYP3A4 P08684 2/20 0.38
TSHR P16473 2/20 0.38
NFKB1 P19838 2/20 0.38
NPSR1 Q6W5P4 2/20 0.38
CES2 O00748 3/20 0.37
CES1 P23141 3/20 0.37
SLC22A1 O15245 1/20 0.35
DNM1 Q05193 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5574312 0.94 CA1 (0.50) CA1BBOX1CA2CES2CES1
SCHEMBL5570500 0.92 CA1 (0.48) CA1BBOX1CA2CES2CES1
SCHEMBL5574993 0.92 CA1 (0.48) CA1BBOX1CA2CES2CES1
SCHEMBL5573683 0.92 CA1 (0.48) CA1BBOX1CA2CES2CES1
SCHEMBL5573593 0.92 CA1 (0.48) CA1BBOX1CA2CES2CES1
Tributylmethylammonium SCHEMBL5570483 0.89 CA1 (0.45) CA1BBOX1CA2CYP3A4TSHR
SCHEMBL5575064 0.87 CA1 (0.47) CA1BBOX1CA2CYP3A4TSHR
SCHEMBL5575052 0.86 CYP3A4 (0.41) CA1BBOX1CA2CYP3A4TSHR
Tributylmethylammonium SCHEMBL4357063 0.86 BBOX1 (0.52) CA1BBOX1CES2CES1SLC22A1
Tetrabuthylammonium SCHEMBL1691312 0.84 SLC22A1 (0.55) CA1CA2CYP3A4TSHRCES2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed