SCHEMBL5573683

SCHEMBL5573683

CC(C)C(=O)[O-].CCCCCC[N+](C)(CCCCCC)CCCCCC

nearest known ligand 0.48

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
CA1 P00915 2/20 0.48
CA2 P00918 1/20 0.46
LSS P48449 1/20 0.45
DNM1 Q05193 7/20 0.43
HTT P42858 1/20 0.43
BBOX1 O75936 1/20 0.42
CES2 O00748 3/20 0.41
CES1 P23141 3/20 0.41
SLC22A1 O15245 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5574993 1.00 CA1 (0.48) CA1CA2LSSDNM1HTT
SCHEMBL5573593 1.00 CA1 (0.48) CA1CA2LSSDNM1HTT
SCHEMBL5570500 1.00 CA1 (0.48) CA1CA2LSSDNM1HTT
SCHEMBL5574312 0.98 CA1 (0.50) CA1CA2LSSDNM1HTT
Tributylmethylammonium SCHEMBL5570530 0.92 CA1 (0.47) CA1CA2DNM1BBOX1CES2
L-Lactic Acid SCHEMBL5574226 0.90 CA1 (0.47) CA1CA2LSSDNM1HTT
L-Lactic Acid SCHEMBL5570538 0.90 CA1 (0.47) CA1CA2LSSDNM1HTT
L-Lactic Acid SCHEMBL5574997 0.90 CA1 (0.47) CA1CA2LSSDNM1HTT
L-Lactic Acid SCHEMBL5570513 0.90 CA1 (0.47) CA1CA2LSSDNM1HTT
SCHEMBL5574311 0.88 DNM1 (0.60) CA1CA2LSSDNM1HTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed