Pivalate

Pivalate

SCHEMBL5570536

CC(C)(C)C(=O)O.CCCCCCCC[N+](C)(C)C

nearest known ligand 0.62

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 8/20 0.62
APAF1 O14727 1/20 0.58
HSP90AA1 P07900 1/20 0.58
RAD52 P43351 1/20 0.58
MEN1 O00255 4/20 0.46
KMT2A Q03164 4/20 0.46
APEX1 P27695 3/20 0.46
NFKB1 P19838 2/20 0.46
KDM4E B2RXH2 2/20 0.46
ACHE P22303 2/20 0.46
SMN1; SMN2 Q16637 2/20 0.46
PMP22 Q01453 2/20 0.46
LMNA P02545 2/20 0.46
HSD17B10 Q99714 1/20 0.46
HRH3 Q9Y5N1 1/20 0.46
TSHR P16473 1/20 0.46
RAB9A P51151 1/20 0.46
HTT P42858 1/20 0.44
NPSR1 Q6W5P4 1/20 0.44
SLC22A1 O15245 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Pivalate SCHEMBL5574424 1.00 DNM1 (0.62) DNM1APAF1HSP90AA1RAD52MEN1
Pivalate SCHEMBL5571655 1.00 DNM1 (0.62) DNM1APAF1HSP90AA1RAD52MEN1
Pivalate SCHEMBL5573308 1.00 DNM1 (0.62) DNM1APAF1HSP90AA1RAD52MEN1
Pivalate SCHEMBL5575060 1.00 DNM1 (0.62) DNM1APAF1HSP90AA1RAD52MEN1
Pivalate SCHEMBL5574384 0.98 DNM1 (0.58) DNM1APAF1HSP90AA1RAD52MEN1
Pivalate SCHEMBL4922262 0.91 DNM1 (0.48) DNM1APAF1HSP90AA1RAD52MEN1
Pivalate SCHEMBL5571705 0.88 DNM1 (0.44) DNM1MEN1KMT2AHSD17B10TSHR
Pivalate SCHEMBL5570490 0.88 DNM1 (0.44) DNM1MEN1KMT2AHSD17B10TSHR
Pivalate SCHEMBL5574163 0.88 DNM1 (0.44) DNM1MEN1KMT2AHSD17B10TSHR
Pivalate SCHEMBL5571684 0.88 DNM1 (0.44) DNM1MEN1KMT2AHSD17B10TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed