Pivalate

Pivalate

SCHEMBL5570490

CC(C)(C)C(=O)O.CCCCCCCCC[N+](C)(CCCCCCCCC)CCCCCCCCC

nearest known ligand 0.44

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 9/20 0.44
HTT P42858 1/20 0.44
SLC22A1 O15245 1/20 0.42
PPARG P37231 3/20 0.41
PPARD Q03181 3/20 0.41
PPARA Q07869 3/20 0.41
TSHR P16473 2/20 0.41
GPR84 Q9NQS5 2/20 0.41
HDAC11 Q96DB2 2/20 0.41
TDP1 Q9NUW8 2/20 0.41
LSS P48449 1/20 0.41
ALDH1A1 P00352 1/20 0.41
SLC22A6 Q4U2R8 1/20 0.41
SLC22A8 Q8TCC7 1/20 0.41
TLR2 O60603 1/20 0.41
MEN1 O00255 1/20 0.41
ESR1 P03372 1/20 0.41
FABP4 P15090 1/20 0.41
ALOX15 P16050 1/20 0.41
PTPN1 P18031 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Pivalate SCHEMBL5571684 1.00 DNM1 (0.44) DNM1HTTSLC22A1PPARGPPARD
Pivalate SCHEMBL5574163 1.00 DNM1 (0.44) DNM1HTTSLC22A1PPARGPPARD
Pivalate SCHEMBL5571705 1.00 DNM1 (0.44) DNM1HTTSLC22A1PPARGPPARD
Pivalate SCHEMBL5575015 0.98 DNM1 (0.41) DNM1HTTSLC22A1PPARGPPARD
Tributylmethylammonium SCHEMBL4924826 0.91 BBOX1 (0.38) DNM1SLC22A1PPARGPPARDPPARA
Pivalate SCHEMBL5573308 0.88 DNM1 (0.62) DNM1HTTSLC22A1TSHRMEN1
Pivalate SCHEMBL5570536 0.88 DNM1 (0.62) DNM1HTTSLC22A1TSHRMEN1
Pivalate SCHEMBL5574424 0.88 DNM1 (0.62) DNM1HTTSLC22A1TSHRMEN1
Pivalate SCHEMBL5575060 0.88 DNM1 (0.62) DNM1HTTSLC22A1TSHRMEN1
Pivalate SCHEMBL5571655 0.88 DNM1 (0.62) DNM1HTTSLC22A1TSHRMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed