Propionic Acid

Propionic Acid

SCHEMBL5571670

CCC(=O)O.CCCCCCCCCCCCC(C)N

nearest known ligand 0.67

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
OPRM1 P35372 1/20 0.67
TP53 P04637 1/20 0.64
GPR84 Q9NQS5 7/20 0.52
GABRP O00591 2/20 0.50
GABRD O14764 2/20 0.50
GABRA1 P14867 2/20 0.50
GABRB1 P18505 2/20 0.50
GABRG2 P18507 2/20 0.50
GABRB3 P28472 2/20 0.50
GABRA5 P31644 2/20 0.50
GABRA3 P34903 2/20 0.50
GABRA2 P47869 2/20 0.50
GABRB2 P47870 2/20 0.50
GABRA4 P48169 2/20 0.50
GABRE P78334 2/20 0.50
GABRA6 Q16445 2/20 0.50
GABRG1 Q8N1C3 2/20 0.50
GABRG3 Q99928 2/20 0.50
GABRQ Q9UN88 2/20 0.50
FFAR1 O14842 2/20 0.50

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Bicarbonate SCHEMBL9188645 0.91 OPRM1 (0.73) OPRM1TP53GPR84FFAR1FFAR4
Carbamic Acid SCHEMBL28702337 0.89 OPRM1 (0.70) OPRM1TP53GPR84FFAR1FFAR4
Acetic Acid SCHEMBL5575019 0.89 OPRM1 (0.70) OPRM1TP53GPR84FFAR1FFAR4
Tuaminoheptane SCHEMBL25287775 0.89 OPRM1 (0.76) OPRM1TP53GPR84GABRPGABRD
Tuaminoheptane SCHEMBL3365884 0.89 OPRM1 (0.76) OPRM1TP53GPR84GABRPGABRD
Tuaminoheptane SCHEMBL8359697 0.89 OPRM1 (0.76) OPRM1TP53GPR84GABRPGABRD
Decanoic Acid SCHEMBL5570509 0.88 FFAR4 (0.67) OPRM1TP53GPR84FFAR1FFAR4
Octanoic Acid SCHEMBL5570462 0.88 FFAR4 (0.67) OPRM1TP53GPR84FFAR1FFAR4
Valeric Acid SCHEMBL5574354 0.88 OPRM1 (0.61) OPRM1TP53GPR84GABRPGABRD
Butyric Acid SCHEMBL5570444 0.88 OPRM1 (0.61) OPRM1TP53GPR84GABRPGABRD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed