Propionic Acid

Propionic Acid

SCHEMBL5571699

CCC(=O)[O-].CCCCC[N+](C)(C)C

nearest known ligand 0.61

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 6/20 0.61
APAF1 O14727 1/20 0.56
HSP90AA1 P07900 1/20 0.56
RAD52 P43351 1/20 0.56
LSS P48449 1/20 0.44
CA1 P00915 1/20 0.44
MEN1 O00255 2/20 0.43
NFKB1 P19838 2/20 0.43
KMT2A Q03164 2/20 0.43
ACHE P22303 2/20 0.43
KDM4E B2RXH2 1/20 0.43
LMNA P02545 1/20 0.43
APEX1 P27695 1/20 0.43
SMN1; SMN2 Q16637 1/20 0.43
HSD17B10 Q99714 1/20 0.43
HRH3 Q9Y5N1 1/20 0.43
TSHR P16473 1/20 0.43
RAB9A P51151 1/20 0.43
PMP22 Q01453 1/20 0.43
CES2 O00748 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Cetrimonium SCHEMBL31516838 0.98 DNM1 (0.65) DNM1APAF1HSP90AA1RAD52LSS
Propionic Acid SCHEMBL8149435 0.98 DNM1 (0.65) DNM1APAF1HSP90AA1RAD52LSS
Propionic Acid SCHEMBL5574986 0.98 DNM1 (0.65) DNM1APAF1HSP90AA1RAD52LSS
Propionic Acid SCHEMBL5574446 0.98 DNM1 (0.65) DNM1APAF1HSP90AA1RAD52LSS
Propionic Acid SCHEMBL5571634 0.98 DNM1 (0.65) DNM1APAF1HSP90AA1RAD52LSS
Propionic Acid SCHEMBL5575004 0.98 DNM1 (0.65) DNM1APAF1HSP90AA1RAD52LSS
Propionic Acid SCHEMBL5571712 0.98 DNM1 (0.65) DNM1APAF1HSP90AA1RAD52LSS
Propionic Acid SCHEMBL5572299 0.93 DNM1 (0.50) DNM1APAF1HSP90AA1RAD52CA1
Bicarbonate SCHEMBL2277893 0.91 DNM1 (0.67) DNM1APAF1HSP90AA1RAD52LSS
Bicarbonate SCHEMBL2273896 0.88 DNM1 (0.71) DNM1APAF1HSP90AA1RAD52LSS

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed