Propionic Acid

Propionic Acid

SCHEMBL5571765

CCC(=O)[O-].CC[N+](C)(CC)CC

nearest known ligand 0.65

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Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
BBOX1 O75936 7/20 0.56
FFAR3 O14843 3/20 0.41
HDAC3 O15379 2/20 0.41
HDAC1 Q13547 2/20 0.41
HDAC2 Q92769 2/20 0.41
HDAC8 Q9BY41 2/20 0.41
SLC22A16 Q86VW1 1/20 0.37
MEN1 O00255 1/20 0.36
CYP2C19 P33261 1/20 0.36
RECQL P46063 1/20 0.36
KMT2A Q03164 1/20 0.36
CA1 P00915 1/20 0.36
TDP1 Q9NUW8 2/20 0.35
ALDH1A1 P00352 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Bicarbonate SCHEMBL557717 0.88 BBOX1 (0.54) BBOX1FFAR3HDAC3HDAC1HDAC2
Bicarbonate SCHEMBL27610752 0.85 BBOX1 (0.52) BBOX1FFAR3HDAC3HDAC1HDAC2
Bicarbonate SCHEMBL8995782 0.85 BBOX1 (0.52) BBOX1FFAR3HDAC3HDAC1HDAC2
Oxalic Acid SCHEMBL1052162 0.85 BBOX1 (0.52) BBOX1FFAR3HDAC3HDAC1HDAC2
Bicarbonate SCHEMBL557719 0.85 BBOX1 (0.52) BBOX1FFAR3HDAC3HDAC1HDAC2
Propionic Acid SCHEMBL5571644 0.85 BBOX1 (0.46) BBOX1FFAR3HDAC3HDAC1HDAC2
Acetic Acid SCHEMBL557337 0.85 BBOX1 (0.52) BBOX1FFAR3HDAC3HDAC1HDAC2
Propionic Acid SCHEMBL103518 0.84 FFAR3 (0.47) BBOX1FFAR3HDAC3HDAC1HDAC2
SCHEMBL28618191 0.82 BBOX1 (0.50) BBOX1FFAR3HDAC3HDAC1HDAC2
Oxalic Acid SCHEMBL6848374 0.82 BBOX1 (0.50) BBOX1FFAR3HDAC3HDAC1HDAC2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed