Propionic Acid

Propionic Acid

SCHEMBL5571644

CCC(=O)[O-].CC[N+](C)(C)C

nearest known ligand 0.69

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Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
BBOX1 O75936 8/20 0.46
SLC22A16 Q86VW1 1/20 0.44
FFAR3 O14843 2/20 0.43
HDAC3 O15379 2/20 0.43
HDAC1 Q13547 2/20 0.43
HDAC2 Q92769 2/20 0.43
HDAC8 Q9BY41 2/20 0.43
MEN1 O00255 2/20 0.42
KMT2A Q03164 2/20 0.42
CYP2C19 P33261 1/20 0.42
RECQL P46063 1/20 0.42
CPT2 P23786 1/20 0.41
CPT1A P50416 1/20 0.41
CYP1A2 P05177 1/20 0.40
HRH1 P35367 1/20 0.40
CA1 P00915 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Bicarbonate SCHEMBL2277691 0.87 BBOX1 (0.44) BBOX1SLC22A16FFAR3HDAC3HDAC1
Propionic Acid SCHEMBL103518 0.87 FFAR3 (0.47) BBOX1SLC22A16FFAR3HDAC3HDAC1
Propionic Acid SCHEMBL11436115 0.85 BBOX1 (0.56) BBOX1SLC22A16FFAR3HDAC3HDAC1
Propionic Acid SCHEMBL5571765 0.85 BBOX1 (0.56) BBOX1SLC22A16FFAR3HDAC3HDAC1
Bicarbonate SCHEMBL9003742 0.84 BBOX1 (0.42) BBOX1SLC22A16FFAR3HDAC3HDAC1
Acetic Acid SCHEMBL2531739 0.84 CA1 (0.53) BBOX1SLC22A16FFAR3HDAC3HDAC1
Bicarbonate SCHEMBL9003745 0.84 TSHR (0.45) BBOX1SLC22A16FFAR3HDAC3HDAC1
Propionic Acid SCHEMBL5934068 0.83
Acetic Acid SCHEMBL29060116 0.81 CA1 (0.50) BBOX1SLC22A16FFAR3HDAC3HDAC1
Propionic Acid SCHEMBL4614991 0.81 FFAR3 (0.43) BBOX1SLC22A16FFAR3HDAC3HDAC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed
EP-0667366-B1 Process for the production of aromatic polycarbonate TEIJIN LTD (JP) 2002-06-26 EP disclosed
US-5516878-A CATALYTIC ESTER INTERCHANGE USING AN ALKALI METAL SALT OF AN ATE-COMPLEX OF A METAL SELECTED FROM SILICON, GERMANIUM, TIN, OR LEAD TEIJIN LIMITED (JP) 1996-05-14 US disclosed
EP-0667366-A2 Process for the production of aromatic polycarbonate TEIJIN LIMITED (JP) 1995-08-16 EP disclosed