Valeric Acid

Valeric Acid

SCHEMBL5573570

CCCCC(=O)[O-].CCCC[N+](C)(C)C

nearest known ligand 0.67

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Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
CA1 P00915 1/20 0.67
BBOX1 O75936 4/20 0.55
FFAR3 O14843 2/20 0.48
HDAC3 O15379 2/20 0.48
HDAC1 Q13547 2/20 0.48
HDAC2 Q92769 2/20 0.48
HDAC8 Q9BY41 2/20 0.48
CES2 O00748 1/20 0.48
CES1 P23141 1/20 0.48
FABP3 P05413 5/20 0.47
ACHE P22303 1/20 0.46
DNM1 Q05193 2/20 0.46

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Hexanoate SCHEMBL5571735 0.94 CA1 (0.58) CA1BBOX1CES2CES1FABP3
Valeric Acid SCHEMBL5574325 0.94 CA1 (0.64) CA1BBOX1FABP3DNM1
Valeric Acid SCHEMBL5571736 0.92 CA1 (0.61) CA1BBOX1FABP3DNM1
Valeric Acid SCHEMBL5574301 0.92 CA1 (0.61) CA1BBOX1FABP3DNM1
Valeric Acid SCHEMBL5573632 0.92 CA1 (0.61) CA1BBOX1FABP3DNM1
Valeric Acid SCHEMBL5571788 0.92 CA1 (0.61) CA1BBOX1FABP3DNM1
Valeric Acid SCHEMBL5574322 0.92 CA1 (0.61) CA1BBOX1FABP3DNM1
Decanoic Acid SCHEMBL5570452 0.92 FABP3 (0.58) CA1CES2CES1FABP3DNM1
Octanoic Acid SCHEMBL5573556 0.92 FABP3 (0.58) CA1CES2CES1FABP3DNM1
Butyric Acid SCHEMBL5574234 0.91 FFAR3 (0.61) CA1BBOX1FFAR3HDAC3HDAC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed