Formic Acid

Formic Acid

SCHEMBL5573574

CCC[N+](C)(C)C.O=CO

nearest known ligand 0.45

Full drug profile on Sugi Atlas →

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.43
LMNA P02545 1/20 0.43
KMT2A Q03164 1/20 0.43
CYP3A4 P08684 1/20 0.43
SLC5A7 Q9GZV3 1/20 0.43
DNM1 Q05193 6/20 0.39
CHRM5 P08912 2/20 0.39
CHRM1 P11229 2/20 0.39
CHRM3 P20309 2/20 0.39
PGR P06401 1/20 0.39
CHRM2 P08172 1/20 0.39
CHRM4 P08173 1/20 0.39
HTR1A P08908 1/20 0.39
CHRNB2 P17787 1/20 0.39
TBXA2R P21731 1/20 0.39
CHRNB4 P30926 1/20 0.39
CHRNA3 P32297 1/20 0.39
CHRNA7 P36544 1/20 0.39
CHRNA4 P43681 1/20 0.39
SMN1; SMN2 Q16637 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Formic Acid SCHEMBL28452506 0.97 LMNA (0.41) MEN1LMNAKMT2ACYP3A4SLC5A7
Formic Acid SCHEMBL5574500 0.83 DNM1 (0.55) MEN1LMNAKMT2ADNM1SMN1; SMN2
Formic Acid SCHEMBL556868 0.82 SLC22A1 (0.35) MEN1LMNAKMT2ACYP3A4SLC5A7
Formic Acid SCHEMBL4540401 0.82 DNM1 (0.39) MEN1LMNAKMT2ADNM1CHRM1
Formic Acid SCHEMBL5574434 0.81 DNM1 (0.67) MEN1LMNAKMT2ADNM1SMN1; SMN2
SCHEMBL160184 0.80
SCHEMBL13169630 0.80
Formic Acid SCHEMBL558269 0.79 DNM1 (0.71) MEN1LMNAKMT2ADNM1SMN1; SMN2
Formic Acid SCHEMBL5570529 0.79 DNM1 (0.71) MEN1LMNAKMT2ADNM1SMN1; SMN2
Cetrimonium SCHEMBL4817929 0.79 DNM1 (0.71) MEN1LMNAKMT2ADNM1SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed