Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | FDPS | P14324 | 1/20 | 0.30 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.30 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Formic Acid SCHEMBL8505568 | 0.85 | — | — | |
| Formic Acid SCHEMBL3812926 | 0.85 | ALDH1A1 (0.35) | ALDH1A1CYP2C19 | |
| Formic Acid SCHEMBL3682015 | 0.85 | — | — | |
| Tert-Butylamine SCHEMBL8647449 | 0.79 | — | — | |
| SCHEMBL15141903 | 0.79 | ALDH1A1 (0.33) | ALDH1A1CYP2C19 | |
| SCHEMBL163513 | 0.79 | — | — | |
| Bicarbonate SCHEMBL1896980 | 0.78 | CYP1A2 (0.39) | FDPSALDH1A1 | |
| Bicarbonate SCHEMBL1896976 | 0.78 | CYP1A2 (0.39) | FDPSALDH1A1 | |
| Formic Acid SCHEMBL5574502 | 0.76 | — | — | |
| Ammonia Solution, Strong SCHEMBL7500908 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-117946357-A | Granulating method of polyisocyanate curing agent | 万华化学集团股份有限公司 | 2024-04-30 | — | — | CN | claimed |
| US-20070135565-A1 | COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2007-06-14 | — | — | US | disclosed |
| US-7132473-B2 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2006-11-07 | — | — | US | disclosed |
| EP-1568744-A1 | COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-08-31 | — | — | EP | disclosed |
| US-20040219372-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2004-11-04 | — | — | US | disclosed |