Acetic Acid

Acetic Acid

SCHEMBL5574141

CC(=O)[O-].CCCC[N+](C)(C)C

nearest known ligand 0.52

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ADRA2AADRA2BADRA2CADRB2AGTR1AVPR1AAVPR1BAVPR2BDKRB2CALCRCHRNA3CHRNB4ESR1ESR2GHSRGNRHRGSC1HSPA8MALT1MC1RMC4RNOS1NOS2NOS3OPRK1OXTRRAMP1RAMP2RAMP3SCN5ASSTR1SSTR2SSTR3SSTR4SSTR5dacAdacBdacCfolPftsImrcAmrcBmrdArplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO

The experimentally established mechanism targets of Acetic Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 6/20 0.52
ACHE P22303 2/20 0.52
APAF1 O14727 1/20 0.48
HSP90AA1 P07900 1/20 0.48
RAD52 P43351 1/20 0.48
CES1 P23141 2/20 0.42
CA1 P00915 2/20 0.42
CES2 O00748 1/20 0.42
MEN1 O00255 2/20 0.41
NFKB1 P19838 2/20 0.41
KMT2A Q03164 2/20 0.41
KDM4E B2RXH2 1/20 0.41
LMNA P02545 1/20 0.41
APEX1 P27695 1/20 0.41
SMN1; SMN2 Q16637 1/20 0.41
HSD17B10 Q99714 1/20 0.41
HRH3 Q9Y5N1 1/20 0.41
TSHR P16473 1/20 0.41
RAB9A P51151 1/20 0.41
PMP22 Q01453 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Acetic Acid SCHEMBL5574313 0.93 DNM1 (0.64) DNM1ACHEAPAF1HSP90AA1RAD52
Bicarbonate SCHEMBL2279601 0.92 DNM1 (0.55) DNM1ACHEAPAF1HSP90AA1RAD52
Acetic Acid SCHEMBL5574277 0.91 DNM1 (0.68) DNM1ACHEAPAF1HSP90AA1RAD52
Cetrimonium SCHEMBL241633 0.91 DNM1 (0.68) DNM1ACHEAPAF1HSP90AA1RAD52
Acetic Acid SCHEMBL3394806 0.91 DNM1 (0.68) DNM1ACHEAPAF1HSP90AA1RAD52
Acetic Acid SCHEMBL23501563 0.91 DNM1 (0.68) DNM1ACHEAPAF1HSP90AA1RAD52
Acetic Acid SCHEMBL534554 0.91 DNM1 (0.68) DNM1ACHEAPAF1HSP90AA1RAD52
Acetic Acid SCHEMBL5574976 0.91 DNM1 (0.68) DNM1ACHEAPAF1HSP90AA1RAD52
Acetic Acid SCHEMBL11395184 0.91 DNM1 (0.68) DNM1ACHEAPAF1HSP90AA1RAD52
Acetic Acid SCHEMBL2528308 0.91 DNM1 (0.68) DNM1ACHEAPAF1HSP90AA1RAD52

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2638123-B1 WORKING MEDIUM FOR ABSORPTION HEAT PUMPS EVONIK DEGUSSA GMBH (DE) 2016-08-31 EP claimed
US-20130219949-A1 WORKING MEDIUM FOR ABSORPTION HEAT PUMPS EVONIK DEGUSSA GMBH (DE) 2013-08-29 US claimed
EP-4717720-A1 CATALYST COMPOSITION, BLOCKED POLYISOCYANATE COMPOSITION, COATING MATERIAL COMPOSITION, COATING FILM, AND METHOD FOR FORMING COATING FILM Tosoh Corporation (JP) 2026-04-01 EP disclosed
WO-2024262553-A1 CATALYST COMPOSITION, BLOCKED POLYISOCYANATE COMPOSITION, COATING MATERIAL COMPOSITION, COATING FILM, AND METHOD FOR FORMING COATING FILM 東ソー株式会社 2024-12-26 WO disclosed
EP-4114372-A1 USE OF QX314 TO PREVENT SYMPATHOEXCITATION ASSOCIATED WITH ADMINISTRATION OF TRPV1 MODULATORS Neucures, Inc. (US) 2023-01-11 EP disclosed
WO-2021178471-A1 USE OF QX314 TO PREVENT SYMPATHOEXCITATION ASSOCIATED WITH ADMINISTRATION OF TRPV1 MODULATORS NEUCURES, INC. (US) 2021-09-10 WO disclosed
WO-2021130848-A1 METHOD FOR PRODUCING SILYL ETHERIFIED PRODUCT OF POLYSACCHARIDE 国立大学法人金沢大学 2021-07-01 WO disclosed
US-20130219949-A1 WORKING MEDIUM FOR ABSORPTION HEAT PUMPS EVONIK DEGUSSA GMBH (DE) 2013-08-29 US disclosed
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed