Hexanoate

Hexanoate

SCHEMBL5574422

CCCCCC(=O)[O-].CCCCC[N+](C)(C)C

nearest known ligand 0.68

Full drug profile on Sugi Atlas →

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
CA1 P00915 1/20 0.58
DNM1 Q05193 6/20 0.56
FABP3 P05413 6/20 0.55
BBOX1 O75936 2/20 0.53
APAF1 O14727 1/20 0.52
HSP90AA1 P07900 1/20 0.52
RAD52 P43351 1/20 0.52

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Decanoic Acid SCHEMBL5573520 0.98 DNM1 (0.60) CA1DNM1FABP3APAF1HSP90AA1
Decanoic Acid SCHEMBL5573560 0.98 DNM1 (0.60) CA1DNM1FABP3APAF1HSP90AA1
Hexanoate SCHEMBL5574315 0.98 DNM1 (0.60) CA1DNM1FABP3APAF1HSP90AA1
Adipic Acid SCHEMBL17435040 0.98 DNM1 (0.60) CA1DNM1FABP3APAF1HSP90AA1
Decanoic Acid SCHEMBL5574353 0.98 DNM1 (0.60) CA1DNM1FABP3APAF1HSP90AA1
Decanoic Acid SCHEMBL5573592 0.98 DNM1 (0.60) CA1DNM1FABP3APAF1HSP90AA1
Stearic Acid SCHEMBL4942597 0.98 DNM1 (0.60) CA1DNM1FABP3APAF1HSP90AA1
Octanoic Acid SCHEMBL5574961 0.98 DNM1 (0.60) CA1DNM1FABP3APAF1HSP90AA1
Adipic Acid SCHEMBL8163652 0.98 DNM1 (0.60) CA1DNM1FABP3APAF1HSP90AA1
Hexanoate SCHEMBL5573541 0.98 DNM1 (0.60) CA1DNM1FABP3APAF1HSP90AA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed