Propionic Acid

Propionic Acid

SCHEMBL5575012

CCC(=O)O.CCCCCCC(C)C(C)(C)N

nearest known ligand 0.46

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GPR84 Q9NQS5 8/20 0.46
GRIK1 P39086 2/20 0.45
GRIK2 Q13002 2/20 0.45
FFAR1 O14842 2/20 0.44
FFAR4 Q5NUL3 1/20 0.44
ACE2 Q9BYF1 1/20 0.44
PPARD Q03181 2/20 0.43
MAPT P10636 1/20 0.43
LCK P06239 1/20 0.43
ZDHHC20 Q5W0Z9 1/20 0.43
ZDHHC2 Q9UIJ5 1/20 0.43
SLC1A2 P43004 1/20 0.42
SLC1A1 P43005 1/20 0.42
CA2 P00918 1/20 0.42
HSPD1 P10809 1/20 0.41
BLM P54132 1/20 0.41
HSPE1 P61604 1/20 0.41
ALDH1A1 P00352 1/20 0.41
TSHR P16473 1/20 0.41
SLC22A6 Q4U2R8 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Propionic Acid SCHEMBL5571637 1.00 GPR84 (0.46) GPR84GRIK1GRIK2FFAR1FFAR4
Propionic Acid SCHEMBL5574991 1.00 GPR84 (0.46) GPR84GRIK1GRIK2FFAR1FFAR4
Propionic Acid SCHEMBL5571719 0.98 GRIK1 (0.43) GPR84GRIK1GRIK2FFAR1FFAR4
Propionic Acid SCHEMBL5574450 0.93 CA2 (0.44) GPR84GRIK1GRIK2MAPTSLC1A2
Bicarbonate SCHEMBL26929177 0.93 GRIK1 (0.47) GPR84GRIK1GRIK2FFAR1FFAR4
Bicarbonate SCHEMBL6737994 0.93 GRIK1 (0.47) GPR84GRIK1GRIK2FFAR1FFAR4
Acetic Acid SCHEMBL5574248 0.91 GRIK1 (0.46) GPR84GRIK1GRIK2FFAR1FFAR4
Acetic Acid SCHEMBL14840286 0.91 GRIK1 (0.46) GPR84GRIK1GRIK2FFAR1FFAR4
Acetic Acid SCHEMBL557481 0.91 GRIK1 (0.46) GPR84GRIK1GRIK2FFAR1FFAR4
Acetic Acid SCHEMBL5570508 0.91 GRIK1 (0.46) GPR84GRIK1GRIK2FFAR1FFAR4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed