Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PGR | P06401 | 2/20 | 0.33 |
| ▸ | RPS6KB2 | Q9UBS0 | 1/20 | 0.33 |
| ▸ | PTGS2 | P35354 | 2/20 | 0.33 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.33 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.32 |
| ▸ | FUT7 | Q11130 | 1/20 | 0.32 |
| ▸ | RAB9A | P51151 | 1/20 | 0.32 |
| ▸ | TSHR | P16473 | 1/20 | 0.31 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.31 |
| ▸ | S1PR1 | P21453 | 1/20 | 0.31 |
| ▸ | S1PR3 | Q99500 | 1/20 | 0.31 |
| ▸ | APP | P05067 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL11957996 | 0.97 | PGR (0.35) | PGRRPS6KB2PTGS2KCNH2KDM4E | |
| SCHEMBL887496 | 0.97 | PGR (0.35) | PGRRPS6KB2PTGS2KCNH2KDM4E | |
| SCHEMBL5574237 | 0.96 | RPS6KB2 (0.38) | RPS6KB2KCNH2 | |
| SCHEMBL6421773 | 0.94 | PGR (0.36) | PGRRPS6KB2PTGS2KCNH2KDM4E | |
| SCHEMBL15581035 | 0.93 | RPS6KB2 (0.40) | RPS6KB2KCNH2 | |
| SCHEMBL15402480 | 0.93 | RPS6KB2 (0.40) | RPS6KB2KCNH2 | |
| SCHEMBL11958248 | 0.91 | KDM4E (0.37) | PGRRPS6KB2KDM4ETSHRHSD17B10 | |
| SCHEMBL12277763 | 0.89 | ERN1 (0.35) | PGRRPS6KB2KDM4E | |
| SCHEMBL18700669 | 0.88 | CYP1A2 (0.33) | PGRRAB9ATSHRS1PR1APP | |
| SCHEMBL11957366 | 0.87 | PGR (0.40) | PGRKCNH2KDM4ERAB9A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2482355-A1 | Thin film transistor comprising novel conductor and dielectric compositions | E. I. du Pont de Nemours and Company (US) | 2012-08-01 | — | — | EP | disclosed |
| US-8053840-B2 | Thin film transistor comprising novel conductor and dielectric compositions | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 2011-11-08 | — | — | US | disclosed |
| US-7781761-B2 | Substituted anthracenes and electronic devices containing the substituted anthracenes | E.I. DU PONT DE NEMOURS AND COMPANY (US) | 2010-08-24 | — | — | US | disclosed |
| US-20090179198-A1 | THIN FILM TRANSISTOR COMPRISING NOVEL CONDUCTOR AND DIELECTRIC COMPOSITIONS | E.I. DU PONT DE NEMOURS AND COMPANY (US) | 2009-07-16 | — | — | US | disclosed |
| US-7528448-B2 | Thin film transistor comprising novel conductor and dielectric compositions | E.I. DU PONT DE NEMOURS AND COMPANY (US) | 2009-05-05 | — | — | US | disclosed |
| US-20080210933-A1 | SUBSTITUTED ANTHRACENES AND ELECTRONIC DEVICES CONTAINING THE SUBSTITUTED ANTHRACENES | E. I. DU PONT DE NEMOURS AND COMPANY | 2008-09-04 | — | — | US | disclosed |
| US-7355199-B2 | Substituted anthracenes and electronic devices containing the substituted anthracenes | E.I. DU PONT DE NEMOURS AND COMPANY (US) | 2008-04-08 | — | — | US | disclosed |
| US-20080012006-A1 | Thin film transistor comprising novel conductor and dielectric compositions | E. I. DU PONT DE NEMOURS AND COMPANY | 2008-01-17 | — | — | US | disclosed |
| US-7276395-B2 | Acene-thiophene semiconductors | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2007-10-02 | — | — | US | disclosed |
| US-7276395-B2 | Acene-thiophene semiconductors | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2007-10-02 | — | — | US | disclosed |
| EP-1654248-A1 | ACENE-THIOPHENE SEMICONDUCTORS | 3M Innovative Properties Company (US) | 2006-05-10 | — | — | EP | disclosed |
| US-20060033086-A1 | Depositing a gate electrode material on the substrate;depositing a gate dielectric on the gate electrode material;depositing an organic semiconductor layer comprising acene-thiophene compounds, providing a source electrode and a drain electrode contiguous to the organic semiconductor layer | GERLACH CHRISTOPHER P | 2006-02-16 | — | — | US | disclosed |
| US-6998068-B2 | Acene-thiophene semiconductors | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2006-02-14 | — | — | US | disclosed |
| WO-2005019198-A1 | ACENE-THIOPHENE SEMICONDUCTORS | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2005-03-03 | — | — | WO | disclosed |
| US-20050035333-A1 | Acene-thiophene semiconductors | 3M INNOVATIVE PROPERTIES COMPANY | 2005-02-17 | — | — | US | disclosed |