SCHEMBL560824

SCHEMBL560824

CC(O)C(C)(CO)CCO

nearest known ligand 0.32

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL343886 0.83
SCHEMBL7247989 0.82 TSHR (0.31) TDP1
SCHEMBL8048839 0.82 TSHR (0.31) TDP1
SCHEMBL15044046 0.77 TSHR (0.31) TDP1
SCHEMBL8366584 0.76
SCHEMBL16134341 0.75 TSHR (0.46)
SCHEMBL7533268 0.75
SCHEMBL8516448 0.72
SCHEMBL27535180 0.72
SCHEMBL7033929 0.70

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1915411-A1 NEW ORGANIC BOTTOM ANTIREFLECTIVE POLYMER COMPOSITIONS AZ Electronic Materials USA Corp. (US) 2008-04-30 EP claimed
US-20070020557-A1 New organic bottom antireflective polymer compositions AZ ELECTRONIC MATERIALS USA CORP. 2007-01-25 US claimed
WO-2007010385-A1 NEW ORGANIC BOTTOM ANTIREFLECTIVE POLYMER COMPOSITIONS AZ ELECTRONIC MATERIALS USA CORP. (DE) 2007-01-25 WO claimed
US-20250231492-A1 MANUFACTURE OF INTEGRATED CIRUIT USING POSITIVE TONE PHOTOPATTERNABLE DIELECTRIC INCLUDING HIGH SILICON CONTENT POLYSILSESQUIOXANE SUNTIFIC MATERIALS (WEIFANG)., LTD. (CN) 2025-07-17 US disclosed
US-20250231491-A1 PHOTOLITHOGRAPHIC METHOD USING SILICON PHOTORESIST SUNTIFIC MATERIALS (WEIFANG)., LTD. (CN) 2025-07-17 US disclosed
CN-119816784-A Fabrication of integrated circuits using positive photo-patternable dielectrics comprising high silicon content polysilsesquioxanes 潍坊星泰克微电子材料有限公司 2025-04-11 CN disclosed
CN-119631021-A Photolithography method using silicon photoresist 潍坊星泰克微电子材料有限公司 2025-03-14 CN disclosed
EP-4508495-A1 MANUFACTURE OF INTEGRATED CIRUIT USING POSITIVE TONE PHOTOPATTERNABLE DIELECTRIC INCLUDING HIGH SILICON CONTENT POLYSILSESQUIOXANE Suntific Materials (Weifang), Ltd. (CN) 2025-02-19 EP disclosed
EP-4508493-A1 PHOTOLITHOGRAPHIC METHOD USING SILICON PHOTORESIST Suntific Materials (Weifang), Ltd. (CN) 2025-02-19 EP disclosed
WO-2025000537-A1 PHOTOLITHOGRAPHIC METHOD USING SILICON PHOTORESIST SUNTIFIC MATERIALS (WEIFANG), LTD. (CN) 2025-01-02 WO disclosed
WO-2025000535-A1 MANUFACTURE OF INTEGRATED CIRUIT USING POSITIVE TONE PHOTOPATTERNABLE DIELECTRIC INCLUDING HIGH SILICON CONTENT POLYSILSESQUIOXANE SUNTIFIC MATERIALS (WEIFANG), LTD. (CN) 2025-01-02 WO disclosed
US-7163751-B2 spin-on antireflective coating compositions that contain an aromatic polyester resin and a solvent comprising an oxyisobutyric acid ester, especially methyl-2-hydroxyisobutyrate; SHIPLEY COMPANY, L.L.C. (US) 2007-01-16 US disclosed
US-20060057491-A1 Coating compositions for use with an overcoated photoresist ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. (US) 2006-03-16 US disclosed
EP-1598702-A1 Coating compositions for use with an overcoated photoresist Rohm and Haas Electronic Materials, L.L.C. (US) 2005-11-23 EP disclosed
WO-2005097883-A2 METHOD OF PRODUCING A CROSSLINKED COATING IN THE MANUFACTURE OF INTEGRATED CIRCUITS KING INDUSTRIES, INC. (US) 2005-10-20 WO disclosed
US-20050215713-A1 Method of producing a crosslinked coating in the manufacture of integrated circuits KING INDUSTRIES, INC. 2005-09-29 US disclosed
US-6852421-B2 Microelectronic wafers having photosensitive antireflective polyester and photoresist multilayers used to form integrated circuits; relief images SHIPLEY COMPANY, L.L.C. (US) 2005-02-08 US disclosed
US-20040209200-A1 spin-on antireflective coating compositions that contain an aromatic polyester resin and a solvent comprising an oxyisobutyric acid ester, especially methyl-2-hydroxyisobutyrate; SHIPLEY COMPANY, L.L.C. 2004-10-21 US disclosed
US-20030180559-A1 Microelectronic wafers having photosensitive antireflective polyester and photoresist multilayers used to form integrated circuits; relief images SHIPLEY COMPANY, L.L.C. 2003-09-25 US disclosed
EP-1298492-A2 Coating compositions for use with an overcoated photoresist Shipley Co. L.L.C. (US) 2003-04-02 EP disclosed