⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL23701679 | 0.89 | — | — | |
| SCHEMBL16335160 | 0.89 | — | — | |
| SCHEMBL21836733 | 0.89 | — | — | |
| SCHEMBL1963946 | 0.89 | — | — | |
| SCHEMBL15213 | 0.87 | — | — | |
| SCHEMBL4812214 | 0.75 | — | — | |
| SCHEMBL36654 | 0.75 | — | — | |
| Ammonia Solution, Strong SCHEMBL25368540 | 0.75 | — | — | |
| SCHEMBL20768711 | 0.75 | — | — | |
| SCHEMBL19513938 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 278 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260026026-A1 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-01-22 | — | — | US | claimed |
| WO-2025201815-A1 | PELLICLE FILM | ASML NETHERLANDS B.V. (NL) | 2025-10-02 | — | — | WO | claimed |
| CN-119575749-A | Method of manufacturing a diaphragm assembly | ASML荷兰有限公司 | 2025-03-07 | — | — | CN | claimed |
| US-12205819-B2 | Method and device for forming metal gate electrodes for transistors | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-01-21 | — | — | US | claimed |
| US-20240369920-A1 | METHOD OF MANUFACTURING A MEMBRANE ASSEMBLY | ASML NETHERLANDS B.V. (NL) | 2024-11-07 | — | — | US | claimed |
| CN-118841511-A | Pole piece and lithium ion battery | 珠海冠宇电池股份有限公司 | 2024-10-25 | — | — | CN | claimed |
| CN-112768448-B | Semiconductor element and method for manufacturing the same | 南亚科技股份有限公司 | 2024-05-28 | — | — | CN | claimed |
| US-11948842-B2 | Etch stop layer between substrate and isolation structure | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-04-02 | — | — | US | claimed |
| US-11942514-B2 | Semiconductor device | NANYA TECHNOLOGY CORPORATION (TW) | 2024-03-26 | — | — | US | claimed |
| CN-114583096-B | Electrode plate and secondary battery thereof | 深圳市研一新材料有限责任公司 | 2024-03-22 | — | — | CN | claimed |
| US-20120256276-A1 | Metal Gate and Fabricating Method Thereof | UNITED MICROELECTRONICS CORP. (TW) | 2012-10-11 | — | — | US | claimed |
| US-6930346-B2 | Evaporation of Y-Si-O films for medium-K dielectrics | MICRON TECHNOLOGY, INC. (US) | 2005-08-16 | — | — | US | claimed |
| US-20050026374-A1 | Evaporation of Y-Si-O films for medium-K dielectrics | MICRON TECHNOLOGY, INC. | 2005-02-03 | — | — | US | claimed |
| US-20030176040-A1 | Evaporation of Y-Si-O films for medium-k dielectrics | MICRON TECHNOLOGY, INC. | 2003-09-18 | — | — | US | claimed |
| US-6544906-B2 | Annealing of high-k dielectric materials | TEXAS INSTRUMENTS INCORPORATED | 2003-04-08 | — | — | US | claimed |
| US-20020081826-A1 | Annealing of high-K dielectric materials | TEXAS INSTRUMENTS INCORPORATED | 2002-06-27 | — | — | US | claimed |
| EP-0608081-B1 | Coated articles and method for the prevention of fuel thermal degradation deposits | GEN ELECTRIC (US) | 1998-08-19 | — | — | EP | claimed |
| EP-0607651-B1 | Prevention of fuel thermal degradation deposits | GEN ELECTRIC (US) | 1998-01-07 | — | — | EP | claimed |
| EP-0608081-A1 | Coated articles and method for the prevention of fuel thermal degradation deposits | GENERAL ELECTRIC COMPANY (US) | 1994-07-27 | — | — | EP | claimed |
| EP-0607651-A1 | Prevention of fuel thermal degradation deposits | GENERAL ELECTRIC COMPANY (US) | 1994-07-27 | — | — | EP | claimed |