SCHEMBL563352

SCHEMBL563352

CC(=Cc1cccc2ccccc12)C(=O)F

nearest known ligand 0.57

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 2/20 0.57
MTNR1A P48039 1/20 0.51
MTNR1B P49286 1/20 0.51
HDAC8 Q9BY41 1/20 0.45
HDAC6 Q9UBN7 1/20 0.45
ALDH1A1 P00352 3/20 0.43
MEN1 O00255 3/20 0.43
KMT2A Q03164 3/20 0.43
MAPT P10636 2/20 0.43
HPGD P15428 2/20 0.43
GAA P10253 1/20 0.43
CRHBP P24387 1/20 0.43
HTT P42858 1/20 0.43
CRHR2 Q13324 1/20 0.43
F2 P00734 1/20 0.42
LMNA P02545 1/20 0.42
CYP1A1 P04798 1/20 0.41
CYP1A2 P05177 1/20 0.41
CYP2D6 P10635 1/20 0.41
NPY1R P25929 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL36974 0.84 KDM4E (0.68) KDM4EMTNR1AMTNR1BHDAC8HDAC6
SCHEMBL819646 0.84 KDM4E (0.68) KDM4EMTNR1AMTNR1BHDAC8HDAC6
SCHEMBL553714 0.83 KDM4E (0.57) KDM4EMTNR1AMTNR1BHDAC8HDAC6
SCHEMBL31602276 0.83 KDM4E (0.57) KDM4EMTNR1AMTNR1BHDAC8HDAC6
SCHEMBL553715 0.83 KDM4E (0.57) KDM4EMTNR1AMTNR1BHDAC8HDAC6
SCHEMBL31172233 0.82 KDM4E (0.51) KDM4EMTNR1AMTNR1BHDAC8HDAC6
SCHEMBL10537503 0.80 KDM4E (0.55) KDM4EMTNR1AMTNR1BHDAC8HDAC6
SCHEMBL3826539 0.80 KDM4E (0.55) KDM4EMTNR1AMTNR1BHDAC8HDAC6
SCHEMBL19143055 0.79 KDM4E (0.53) KDM4EMTNR1AMTNR1BHDAC8HDAC6
SCHEMBL5067795 0.77 KDM4E (0.46) KDM4EMTNR1AMTNR1BHDAC8HDAC6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8609318-B2 Radiation-sensitive resin composition, method for forming resist pattern and polymer JSR CORPORATION (JP) 2013-12-17 US disclosed
US-20120034560-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN AND POLYMER JSR CORPORATION (JP) 2012-02-09 US disclosed