Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.40 |
| ▸ | LMNA | P02545 | 1/20 | 0.40 |
| ▸ | RIPK1 | Q13546 | 2/20 | 0.39 |
| ▸ | HRH1 | P35367 | 2/20 | 0.36 |
| ▸ | AOC3 | Q16853 | 1/20 | 0.36 |
| ▸ | CACNA1F | O60840 | 1/20 | 0.36 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.36 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.36 |
| ▸ | ADRA2B | P18089 | 1/20 | 0.36 |
| ▸ | CHRM3 | P20309 | 1/20 | 0.36 |
| ▸ | ADRA1A | P35348 | 1/20 | 0.36 |
| ▸ | OPRK1 | P41145 | 1/20 | 0.36 |
| ▸ | CACNA1D | Q01668 | 1/20 | 0.36 |
| ▸ | SLC6A3 | Q01959 | 1/20 | 0.36 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.36 |
| ▸ | CACNA1S | Q13698 | 1/20 | 0.36 |
| ▸ | CACNA1C | Q13936 | 1/20 | 0.36 |
| ▸ | SCN5A | Q14524 | 1/20 | 0.36 |
| ▸ | SLC6A4 | P31645 | 1/20 | 0.36 |
| ▸ | DPP4 | P27487 | 2/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4847089 | 0.81 | RIPK1 (0.36) | KDM4ELMNARIPK1HRH1AOC3 | |
| SCHEMBL27657612 | 0.81 | RIPK1 (0.36) | KDM4ELMNARIPK1HRH1AOC3 | |
| SCHEMBL27168800 | 0.81 | TSHR (0.41) | KDM4ELMNARIPK1HRH1AOC3 | |
| SCHEMBL5029899 | 0.76 | RIPK1 (0.43) | LMNARIPK1HRH1AOC3CACNA1F | |
| SCHEMBL23880379 | 0.72 | RIPK1 (0.40) | LMNARIPK1HRH1AOC3CACNA1F | |
| SCHEMBL2212637 | 0.72 | RIPK1 (0.40) | KDM4ELMNARIPK1HRH1AOC3 | |
| SCHEMBL352841 | 0.72 | TAAR1 (0.46) | KDM4ELMNARIPK1AOC3SLC6A3 | |
| SCHEMBL10476770 | 0.72 | RIPK1 (0.43) | KDM4ELMNARIPK1AOC3SLC6A3 | |
| SCHEMBL16210936 | 0.72 | RIPK1 (0.43) | KDM4ELMNARIPK1AOC3SLC6A3 | |
| SCHEMBL28817806 | 0.72 | RIPK1 (0.40) | LMNARIPK1HRH1AOC3CACNA1F |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 135 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3223328-B1 | ORGANIC PHOTOVOLTAIC CELL AND MANUFACTURING METHOD THEREOF | KOLON INC (KR) | 2020-07-29 | — | — | EP | claimed |
| EP-3223328-A1 | ORGANIC PHOTOVOLTAIC CELL AND MANUFACTURING METHOD THEREOF | Kolon Industries, Inc. (KR) | 2017-09-27 | — | — | EP | claimed |
| WO-2013100284-A1 | METHOD FOR MANUFACTURING ORGANIC SOLAR CELL AND THE ORGANIC SOLAR CELL MANUFACTURING BY USING THE SAME | KOLON INDUSTRIES, INC. (KR) | 2013-07-04 | — | — | WO | claimed |
| US-8216686-B2 | Conjugated dendron having no heteroatoms is coupled to the triphenylamine core; organic memory device includes an organic active layer between a first electrode and a second electrode, wherein the organic active layer includes the dendrimer; may be used as a nonvolatile memory | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-07-10 | — | — | US | claimed |
| US-8124238-B2 | Redox system ; dendrimer is connected to core by linker group | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-02-28 | — | — | US | claimed |
| US-8044387-B1 | Semiconductor device built on plastic substrate | SPANSION LLC (US) | 2011-10-25 | — | — | US | claimed |
| US-8012673-B1 | Processing a copolymer to form a polymer memory cell | SPANSION LLC (US) | 2011-09-06 | — | — | US | claimed |
| US-7902086-B2 | Prevention of oxidation of carrier ions to improve memory retention properties of polymer memory cell | SPANSION LLC (US) | 2011-03-08 | — | — | US | claimed |
| US-7635859-B2 | Memory device including dendrimer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-12-22 | — | — | US | claimed |
| US-7632706-B2 | System and method for processing an organic memory cell | SPANSION LLC (US) | 2009-12-15 | — | — | US | claimed |
| US-7115440-B1 | SO2 treatment of oxidized CuO for copper sulfide formation of memory element growth | ADVANCED MICRO DEVICES, INC. (US) | 2006-10-03 | — | — | US | claimed |
| US-20060157691-A1 | Memory device including dendrimer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-07-20 | — | — | US | claimed |
| EP-1679720-A2 | Memory device including dendrimer | Samsung Electronics Co., Ltd (KR) | 2006-07-12 | — | — | EP | claimed |
| US-7026702-B2 | Memory device | ADVANCED MICRO DEVICES, INC. (US) | 2006-04-11 | — | — | US | claimed |
| WO-2005104188-A2 | POLYMER DIELECTRICS FOR MEMORY ELEMENT ARRAY INTERCONNECT | ADVANCED MICRO DEVICES, INC. (US) | 2005-11-03 | — | — | WO | claimed |
| US-20050224922-A1 | Polymer dielectrics for memory element array interconnect | MORGAN STANLEY SENIOR FUNDING, INC. | 2005-10-13 | — | — | US | claimed |
| US-6893895-B1 | CuS formation by anodic sulfide passivation of copper surface | ADVANCED MICRO DEVICES, INC. (US) | 2005-05-17 | — | — | US | claimed |
| US-20040159835-A1 | Memory device | CYPRESS SEMICONDUCTOR CORPORATION | 2004-08-19 | — | — | US | claimed |
| US-6768157-B2 | Memory device | ADVANCED MICRO DEVICES, INC. | 2004-07-27 | — | — | US | claimed |
| US-20030178667-A1 | Memory device | CYPRESS SEMICONDUCTOR CORPORATION | 2003-09-25 | — | — | US | claimed |