⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL30522314 | 1.00 | — | — | |
| SCHEMBL29576452 | 1.00 | — | — | |
| SCHEMBL565229 | 1.00 | — | — | |
| SCHEMBL2148404 | 0.82 | — | — | |
| SCHEMBL6867041 | 0.82 | — | — | |
| SCHEMBL2148406 | 0.82 | — | — | |
| SCHEMBL19181781 | 0.82 | — | — | |
| SCHEMBL11412395 | 0.82 | — | — | |
| SCHEMBL1473407 | 0.82 | — | — | |
| SCHEMBL2883797 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1775 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12527232-B2 | BiSb topological insulator with seed layer or interlayer to prevent Sb diffusion and promote BiSb (012) orientation | WESTERN DIGITAL TECHNOLOGIES, INC. (US) | 2026-01-13 | — | — | US | claimed |
| EP-4587400-A1 | MAGNETRON SPUTTERING VAPOR DEPOSITION COATING COMPOSITION COMPRISING LIGHT ABSORPTIVE MATERIALS | Vitro Flat Glass LLC (US) | 2025-07-23 | — | — | EP | claimed |
| EP-4587401-A1 | REFLECTIVE COATING | Vitro Flat Glass LLC (US) | 2025-07-23 | — | — | EP | claimed |
| US-12284770-B2 | Low sheet resistance coating | VITRO FLAT GLASS LLC (US) | 2025-04-22 | — | — | US | claimed |
| CN-119866319-A | Reflective coating | 维特罗平板玻璃有限责任公司 | 2025-04-22 | — | — | CN | claimed |
| CN-119866318-A | Magnetron sputtering vapor deposition coating composition comprising light absorbing material | 维特罗平板玻璃有限责任公司 | 2025-04-22 | — | — | CN | claimed |
| CN-119815830-A | Three-dimensional memory structure and integration method thereof | 北京大学 | 2025-04-11 | — | — | CN | claimed |
| CN-119815829-A | Three-dimensional stacked access memory structure and integration method thereof | 北京大学 | 2025-04-11 | — | — | CN | claimed |
| CN-119521718-A | Semiconductor device, preparation method and electronic equipment | 华为技术有限公司 | 2025-02-25 | — | — | CN | claimed |
| CN-112397588-B | Semiconductor structure and forming method thereof | 中芯国际集成电路制造(上海)有限公司 | 2025-02-21 | — | — | CN | claimed |
| CN-1060588-C | Method for fabricating semiconductor device having CMOS structure | NEC CORP (JP) | 2001-01-10 | — | — | CN | claimed |
| US-6087260-A | Method of manufacturing bit line | UNITED SEMICONDUCTOR CORP. (TW) | 2000-07-11 | — | — | US | claimed |
| CN-1257586-A | High conductivity buried layer in optical waveguide | SECR DEFENCE (GB) | 2000-06-21 | — | — | CN | claimed |
| CN-1220486-A | Semiconductor device having simultaneously formed contacts on different impurity injected regions and method of forming contacts in semiconductor device | SAMSUNG ELECTRONICS CO LTD (KR) | 1999-06-23 | — | — | CN | claimed |
| CN-1037723-C | Method for manufacturing read-only memory by ion implantation technology | MAOXI ELECTRONIC CO LTD TAIWAN (CN) | 1998-03-11 | — | — | CN | claimed |
| CN-1156902-A | Method for fabricating semiconductor device having CMOS structure | NEC CORP (JP) | 1997-08-13 | — | — | CN | claimed |
| CN-1120232-A | Method for manufacturing read-only memory by ion implantation technology | MAOXI ELECTRONIC CO LTD TAIWAN (CN) | 1996-04-10 | — | — | CN | claimed |
| US-5185303-A | Ceramic articles with tailored metallic component | LANXIDE TECHNOLOGY COMPANY, LP (US) | 1993-02-09 | — | — | US | claimed |
| US-5066618-A | Self-supporting | LANXIDE TECHNOLOGY COMPANY, LP (US) | 1991-11-19 | — | — | US | claimed |
| US-4195247-A | PREVENTS WARPING | GENERAL ELECTRIC COMPANY (US) | 1980-03-25 | — | — | US | claimed |