SCHEMBL565229

SCHEMBL565229

[Co].[Si]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30522314 1.00
SCHEMBL29576452 1.00
SCHEMBL565228 1.00
SCHEMBL2148404 0.82
SCHEMBL6867041 0.82
SCHEMBL2148406 0.82
SCHEMBL19181781 0.82
SCHEMBL11412395 0.82
SCHEMBL1473407 0.82
SCHEMBL2883797 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1886 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12527232-B2 BiSb topological insulator with seed layer or interlayer to prevent Sb diffusion and promote BiSb (012) orientation WESTERN DIGITAL TECHNOLOGIES, INC. (US) 2026-01-13 US claimed
EP-4587400-A1 MAGNETRON SPUTTERING VAPOR DEPOSITION COATING COMPOSITION COMPRISING LIGHT ABSORPTIVE MATERIALS Vitro Flat Glass LLC (US) 2025-07-23 EP claimed
EP-4587401-A1 REFLECTIVE COATING Vitro Flat Glass LLC (US) 2025-07-23 EP claimed
CN-119866318-A Magnetron sputtering vapor deposition coating composition comprising light absorbing material 维特罗平板玻璃有限责任公司 2025-04-22 CN claimed
CN-119866319-A Reflective coating 维特罗平板玻璃有限责任公司 2025-04-22 CN claimed
US-12284770-B2 Low sheet resistance coating VITRO FLAT GLASS LLC (US) 2025-04-22 US claimed
CN-118908218-B Low-energy-consumption high-capacity silicon-carbon anode material and preparation method and application thereof 湖南智电谷新能源技术研究院有限公司 2025-04-18 CN claimed
CN-119815830-A Three-dimensional memory structure and integration method thereof 北京大学 2025-04-11 CN claimed
CN-119815829-A Three-dimensional stacked access memory structure and integration method thereof 北京大学 2025-04-11 CN claimed
CN-119521718-A Semiconductor device, preparation method and electronic equipment 华为技术有限公司 2025-02-25 CN claimed
CN-1060588-C Method for fabricating semiconductor device having CMOS structure NEC CORP (JP) 2001-01-10 CN claimed
US-6087260-A Method of manufacturing bit line UNITED SEMICONDUCTOR CORP. (TW) 2000-07-11 US claimed
CN-1257586-A High conductivity buried layer in optical waveguide SECR DEFENCE (GB) 2000-06-21 CN claimed
CN-1220486-A Semiconductor device having simultaneously formed contacts on different impurity injected regions and method of forming contacts in semiconductor device SAMSUNG ELECTRONICS CO LTD (KR) 1999-06-23 CN claimed
CN-1037723-C Method for manufacturing read-only memory by ion implantation technology MAOXI ELECTRONIC CO LTD TAIWAN (CN) 1998-03-11 CN claimed
CN-1156902-A Method for fabricating semiconductor device having CMOS structure NEC CORP (JP) 1997-08-13 CN claimed
CN-1120232-A Method for manufacturing read-only memory by ion implantation technology MAOXI ELECTRONIC CO LTD TAIWAN (CN) 1996-04-10 CN claimed
US-5185303-A Ceramic articles with tailored metallic component LANXIDE TECHNOLOGY COMPANY, LP (US) 1993-02-09 US claimed
US-5066618-A Self-supporting LANXIDE TECHNOLOGY COMPANY, LP (US) 1991-11-19 US claimed
US-4195247-A PREVENTS WARPING GENERAL ELECTRIC COMPANY (US) 1980-03-25 US claimed