Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 2/20 | 0.35 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.32 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.32 |
| ▸ | P2RX7 | Q99572 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1727171 | 0.80 | HSD11B1 (0.45) | HSD11B1CYP2C9P2RX7 | |
| SCHEMBL20306757 | 0.79 | HSD11B1 (0.40) | HSD11B1 | |
| SCHEMBL7741675 | 0.79 | POLB (0.38) | HSD11B1CYP2C9CYP2C19P2RX7 | |
| SCHEMBL14118138 | 0.71 | POLB (0.39) | HSD11B1CYP2C9CYP2C19P2RX7 | |
| SCHEMBL12576169 | 0.70 | KMT2A (0.42) | — | |
| SCHEMBL21376838 | 0.68 | CNR1 (0.45) | HSD11B1CYP2C9CYP2C19 | |
| SCHEMBL14189730 | 0.67 | KMT2A (0.43) | CYP2C9CYP2C19 | |
| Acetic Acid SCHEMBL14244268 | 0.66 | FFAR3 (0.47) | HSD11B1CYP2C9CYP2C19 | |
| SCHEMBL8765839 | 0.65 | MEN1 (0.38) | HSD11B1CYP2C9CYP2C19 | |
| SCHEMBL7258876 | 0.65 | CYP2C9 (0.42) | HSD11B1CYP2C9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-0908473-B1 | Styrene polymers, chemically-amplified positive resist compositions, their preparation and use in a patterning process | SHINETSU CHEMICAL CO (JP) | 2006-02-01 | — | — | EP | claimed |
| EP-0908473-B1 | Styrene polymers, chemically-amplified positive resist compositions, their preparation and use in a patterning process | SHINETSU CHEMICAL CO (JP) | 2006-02-01 | — | — | EP | disclosed |
| US-6613844-B2 | Polyhydroxystyrene type polymer containing acid labile groups, endcapped and optionally crosslinked; improved alkali dissolution contrast, sensitivity, resolution, plasma etching resistance, heat resistance, and reproducibility | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-09-02 | — | — | US | disclosed |
| US-20030013832-A1 | Novel styrene polymer, chemically amplified positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-01-16 | — | — | US | disclosed |
| US-6384169-B1 | POLYHYDROXYSTYRENE WITH ACID LABILE GROUP, MODIFIED AT ENDS WITH ALKYLS, ESTERS OR ALCOHOLS; INCREASED DISSOLUTION RATE, HIGH SENSITIVITY AND RESOLUTION; RESIST PATTERNS HAVE PLASMA ETCHING RESISTANCE, HEAT RESISTANCE, REPRODUCIBILITY | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-05-07 | — | — | US | disclosed |
| EP-0908473-A1 | Styrene polymers, chemically-amplified positive resist compositions, their preparation and use in a patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-04-14 | — | — | EP | disclosed |