SCHEMBL5679381

SCHEMBL5679381

CCCCOC(=O)c1ccccc1CCl

nearest known ligand 0.73

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 9/20 0.73
TDP1 Q9NUW8 3/20 0.73
L3MBTL1 Q9Y468 2/20 0.73
MAPK1 P28482 3/20 0.66
CYP3A4 P08684 3/20 0.66
TP53 P04637 1/20 0.66
ALDH1A1 P00352 6/20 0.64
LMNA P02545 3/20 0.64
HSD17B10 Q99714 2/20 0.63
KDM4E B2RXH2 2/20 0.56
POLB P06746 1/20 0.56
SCN1A P35498 1/20 0.50
SCN2A Q99250 1/20 0.50
SCN3A Q9NY46 1/20 0.50
CYP1A2 P05177 3/20 0.49
CYP2C19 P33261 3/20 0.49
SMN1; SMN2 Q16637 3/20 0.49
ESR1 P03372 1/20 0.47
CYP2D6 P10635 1/20 0.47
NR1H2 P55055 1/20 0.47

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8459868 0.95 TSHR (0.73) TSHRTDP1L3MBTL1MAPK1CYP3A4
SCHEMBL6596574 0.90 ALDH1A1 (0.71) TSHRTDP1L3MBTL1MAPK1CYP3A4
SCHEMBL9278581 0.89 TSHR (0.80) TSHRTDP1L3MBTL1MAPK1CYP3A4
SCHEMBL8477700 0.86 TSHR (0.75) TSHRTDP1L3MBTL1MAPK1CYP3A4
SCHEMBL169573 0.86 TSHR (0.75) TSHRTDP1L3MBTL1MAPK1CYP3A4
SCHEMBL8477699 0.86 TSHR (0.75) TSHRTDP1L3MBTL1MAPK1CYP3A4
SCHEMBL10884807 0.86 TSHR (0.75) TSHRTDP1L3MBTL1MAPK1CYP3A4
SCHEMBL5597642 0.85 TSHR (0.55) TSHRTDP1L3MBTL1MAPK1CYP3A4
Dibutyl Phthalate SCHEMBL2330224 0.85 TSHR (1.00) TSHRTDP1L3MBTL1MAPK1CYP3A4
Dibutyl Phthalate SCHEMBL24051 0.85 TSHR (1.00) TSHRTDP1L3MBTL1MAPK1CYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-0908473-B1 Styrene polymers, chemically-amplified positive resist compositions, their preparation and use in a patterning process SHINETSU CHEMICAL CO (JP) 2006-02-01 EP claimed
EP-0908473-B1 Styrene polymers, chemically-amplified positive resist compositions, their preparation and use in a patterning process SHINETSU CHEMICAL CO (JP) 2006-02-01 EP disclosed
US-6613844-B2 Polyhydroxystyrene type polymer containing acid labile groups, endcapped and optionally crosslinked; improved alkali dissolution contrast, sensitivity, resolution, plasma etching resistance, heat resistance, and reproducibility SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-09-02 US disclosed
US-20030013832-A1 Novel styrene polymer, chemically amplified positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-01-16 US disclosed
US-6384169-B1 POLYHYDROXYSTYRENE WITH ACID LABILE GROUP, MODIFIED AT ENDS WITH ALKYLS, ESTERS OR ALCOHOLS; INCREASED DISSOLUTION RATE, HIGH SENSITIVITY AND RESOLUTION; RESIST PATTERNS HAVE PLASMA ETCHING RESISTANCE, HEAT RESISTANCE, REPRODUCIBILITY SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-05-07 US disclosed
EP-0908473-A1 Styrene polymers, chemically-amplified positive resist compositions, their preparation and use in a patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-04-14 EP disclosed