SCHEMBL5769032

SCHEMBL5769032

FC#CC(C(F)(F)F)(C(F)(F)F)C(F)(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1822812 0.72
SCHEMBL1821172 0.69
SCHEMBL163948 0.69
SCHEMBL1818181 0.67
SCHEMBL21895340 0.67
SCHEMBL1685090 0.65
SCHEMBL1821174 0.61
SCHEMBL8679427 0.61
SCHEMBL6358198 0.60 LMNA (0.36)
SCHEMBL15352117 0.60 LMNA (0.36)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7060323-B2 Method of forming interlayer insulating film MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-06-13 US disclosed
EP-1207217-B1 Method of forming an interlayer insulating film MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) 2004-11-10 EP disclosed
EP-1050599-B1 Method of forming interlayer insulating film MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) 2004-06-09 EP disclosed
US-20030203655-A1 Method of forming interlayer insulating film MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-10-30 US disclosed
US-6558756-B2 From organosilicon compound MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-05-06 US disclosed
EP-1207217-A1 Method of forming an interlayer insulating film MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2002-05-22 EP disclosed
EP-1182275-A2 Method of forming an interlayer insulating film Matsushita Electric Industrial Co., Ltd. (JP) 2002-02-27 EP disclosed
US-20020004298-A1 Method of forming interlayer insulating film MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2002-01-10 US disclosed
US-20010051228-A1 Method of forming interlayer insulating film MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2001-12-13 US disclosed
US-6148165-A Apparatus with bipolar photoconductive element for making multicolor electrophotographic images and method for producing images EASTMAN KODAK COMPANY (US) 2000-11-14 US disclosed
EP-1050599-A2 Method of forming interlayer insulating film MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2000-11-08 EP disclosed
US-6020097-A DIAMOND-LIKE CARBON PROTECTIVE COATING EASTMAN KODAK COMPANY (US) 2000-02-01 US disclosed
US-6007954-A CHARGING PHOTOCONDUCTIVE ELEMENT COMPRISING ELECTROCONDUCTIVE BASE, CHARGE GENERATION LAYERS, CHARGE TRANSPORT LAYER, PROTECTIVE LAYER AND THEN EXPOSING IT IMAGEWISE TO CREATE ELECTROSTATIC LATENT IMAGE EASTMAN KODAK COMPANY (US) 1999-12-28 US disclosed
US-5989998-A Method of forming interlayer insulating film MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1999-11-23 US disclosed
US-5900342-A CONDUCTIVE SUPPORT; CHARGE GENERATING COMPOUND; CHARGE TRANSFER COMPOUND EASTMAN KODAK COMPANY (US) 1999-05-04 US disclosed
US-5882830-A Photoconductive elements having multilayer protective overcoats EASTMAN KODAK COMPANY (US) 1999-03-16 US disclosed
US-5849443-A Method of making multilayer electrophotographic elements EASTMAN KODAK COMPANY (US) 1998-12-15 US disclosed
US-5849445-A Multilayer photoconductive elements having low dark decay EASTMAN KODAK COMPANY (US) 1998-12-15 US disclosed
EP-0826791-A2 Method of forming interlayer insulating film MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1998-03-04 EP disclosed
US-5674621-A OUTER LAYER PROVIDES FOR ENHANCED TONER RELEASE EASTMAN KODAK COMPANY (US) 1997-10-07 US disclosed