Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of Oxalic Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA12 | O43570 | 2/20 | 0.52 |
| ▸ | CA1 | P00915 | 2/20 | 0.52 |
| ▸ | CA9 | Q16790 | 2/20 | 0.52 |
| ▸ | KDM5A | P29375 | 4/20 | 0.52 |
| ▸ | PHF8 | Q9UPP1 | 2/20 | 0.48 |
| ▸ | KDM4C | Q9H3R0 | 2/20 | 0.48 |
| ▸ | ALOX15 | P16050 | 2/20 | 0.46 |
| ▸ | MMP1 | P03956 | 1/20 | 0.43 |
| ▸ | MMP2 | P08253 | 1/20 | 0.43 |
| ▸ | MMP3 | P08254 | 1/20 | 0.43 |
| ▸ | MMP8 | P22894 | 1/20 | 0.43 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.42 |
| ▸ | LMNA | P02545 | 2/20 | 0.42 |
| ▸ | MEN1 | O00255 | 2/20 | 0.42 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.42 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.42 |
| ▸ | AKR1B1 | P15121 | 1/20 | 0.42 |
| ▸ | ICMT | O60725 | 1/20 | 0.41 |
| ▸ | ALB | P02768 | 1/20 | 0.41 |
| ▸ | THRA | P10827 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Oxalic Acid SCHEMBL5874878 | 1.00 | CA12 (0.52) | CA12CA1CA9KDM5APHF8 | |
| Bicarbonate SCHEMBL5874857 | 0.92 | CA12 (0.54) | CA12CA1CA9KDM5APHF8 | |
| Bicarbonate SCHEMBL5874864 | 0.92 | CA12 (0.54) | CA12CA1CA9KDM5APHF8 | |
| Oxalic Acid SCHEMBL1131167 | 0.91 | KDM5A (0.46) | CA12CA1CA9KDM5APHF8 | |
| Oxalic Acid SCHEMBL30185057 | 0.91 | KDM5A (0.46) | CA12CA1CA9KDM5APHF8 | |
| Oxalic Acid SCHEMBL29023724 | 0.90 | KDM5A (0.55) | KDM5APHF8KDM4CALOX15ALDH1A1 | |
| Oxalic Acid SCHEMBL28161756 | 0.90 | KDM5A (0.50) | CA12CA1CA9KDM5APHF8 | |
| Oxalic Acid SCHEMBL29023725 | 0.90 | KDM5A (0.55) | KDM5APHF8KDM4CALOX15ALDH1A1 | |
| Acetic Acid SCHEMBL692128 | 0.89 | CA12 (0.52) | CA12CA1CA9KDM5APHF8 | |
| Acetic Acid SCHEMBL27778890 | 0.89 | CA12 (0.52) | CA12CA1CA9KDM5APHF8 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4702010-A1 | PHOTOACTIVE COMPOUNDS | Merck Patent GmbH (DE) | 2026-03-04 | — | — | EP | disclosed |
| US-20250028245-A1 | POSITIVE TONE ULTRA THICK PHOTORESIST COMPOSITION | EMD PERFORMANCE MATERIALS CORP. | 2025-01-23 | — | — | US | disclosed |
| WO-2024223739-A1 | PHOTOACTIVE COMPOUNDS | MERCK PATENT GMBH (DE) | 2024-10-31 | — | — | WO | disclosed |
| EP-4433874-A1 | POSITIVE TONE ULTRA THICK PHOTORESIST COMPOSITION | Merck Patent GmbH (DE) | 2024-09-25 | — | — | EP | disclosed |
| CN-118284854-A | Positive ultra-thick photoresist composition | 默克专利股份有限公司 | 2024-07-02 | — | — | CN | disclosed |
| WO-2023088874-A1 | POSITIVE TONE ULTRA THICK PHOTORESIST COMPOSITION | MERCK PATENT GMBH (DE) | 2023-05-25 | — | — | WO | disclosed |
| CN-108885396-B | Positive working photosensitive material | 默克专利有限公司 | 2023-03-24 | — | — | CN | disclosed |
| CN-115485622-A | DNQ-free chemically amplified resist compositions | 默克专利股份有限公司 | 2022-12-16 | — | — | CN | disclosed |
| US-10976662-B2 | Positive working photosensitive material | MERCK PATENT GMBH (DE) | 2021-04-13 | — | — | US | disclosed |
| EP-3446180-B1 | POSITIVE WORKING PHOTOSENSITIVE MATERIAL | AZ ELECTRONIC MAT LUXEMBOURG SARL (LU) | 2020-04-01 | — | — | EP | disclosed |
| US-7128976-B2 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2006-10-31 | — | — | US | disclosed |
| US-6984254-B2 | Lead-free solder alloy and a manufacturing process of electric and electronic apparatuses using such a lead-free solder alloy | FUJITSU LIMITED (JP) | 2006-01-10 | — | — | US | disclosed |
| US-20040052678-A1 | Lead-free solder alloy and a manufacturing process of electric and electronic apparatuses using such a lead-free solder alloy | FUJITSU LIMITED | 2004-03-18 | — | — | US | disclosed |
| US-20030095888-A1 | Lead-free solder alloy and a manufacturing process of electric and electronic apparatuses using such a lead-free solder alloy | FUJITSU LIMITED | 2003-05-22 | — | — | US | disclosed |
| US-20030091838-A1 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2003-05-15 | — | — | US | disclosed |
| US-6521176-B2 | Lead-free solder alloy and a manufacturing process of electric and electronic apparatuses using such a lead-free solder alloy | FUJITSU LIMITED (JP) | 2003-02-18 | — | — | US | disclosed |
| US-20010001990-A1 | Lead-free solder alloy and a manufacturing process of electric and electronic apparatuses using such a lead-free solder alloy | FUJITSU LIMITED | 2001-05-31 | — | — | US | disclosed |
| US-6184475-B1 | Lead-free solder composition with Bi, In and Sn | FUJITSU LIMITED (JP) | 2001-02-06 | — | — | US | disclosed |