SCHEMBL5853281

SCHEMBL5853281

[CH2]CCN(CC=C)CC1CO1

nearest known ligand 0.34

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.34
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4742463 0.86 ALDH1A1 (0.40) ALDH1A1TDP1
SCHEMBL458282 0.86 ALDH1A1 (0.40) ALDH1A1TDP1
SCHEMBL2139599 0.84 ALDH1A1 (0.39) ALDH1A1TDP1
Hydrochloric Acid SCHEMBL27480971 0.84 ALDH1A1 (0.39) ALDH1A1TDP1
SCHEMBL5851303 0.83 ALDH1A1 (0.32) ALDH1A1TDP1
Oxirane SCHEMBL11562647 0.80 ALDH1A1 (0.36) ALDH1A1TDP1
SCHEMBL29214425 0.78 ALDH1A1 (0.43) ALDH1A1TDP1
SCHEMBL22198078 0.74 ALDH1A1 (0.32) ALDH1A1
Alcohol SCHEMBL29283693 0.74 ALDH1A1 (0.40) ALDH1A1TDP1
SCHEMBL192060 0.73 KDM4E (0.33)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2023136227-A1 THIXOTROPIC SILICONE GEL COMPOSITION, SILICONE GEL CURED PRODUCT, AND ELECTRICAL/ELECTRONIC COMPONENTS 信越化学工業株式会社 2023-07-20 WO disclosed
US-20060205237-A1 Preparation of semiconductor device SHIN-ETSU CHEMICAL CO, LTD. 2006-09-14 US disclosed
US-7031591-B2 Photocurable organopolysiloxane formulation containing an alkali-soluble organopolysiloxane and a photoacid generator, wherein the organopolysiloxane is obtained by (co)hydrolytic condensation of a triorganoxysilane having hydrolyzable epoxide SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-04-18 US disclosed
US-20040017994-A1 Optical waveguide, forming material and making method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-01-29 US disclosed
EP-0466025-B1 Resist material, method for the production of the same and process of forming resist patterns using the same NIPPON TELEGRAPH & TELEPHONE (JP) 1999-03-10 EP disclosed
US-5457003-A Polysiloxane, polysilsesquioxane NIPPON TELEGRAPH AND TELEPHONE CORPORATION (JP) 1995-10-10 US disclosed
EP-0466025-A2 Resist material, method for the production of the same and process of forming resist patterns using the same NIPPON TELEGRAPH AND TELEPHONE CORPORATION (JP) 1992-01-15 EP disclosed