⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28721477 | 0.72 | — | — | |
| SCHEMBL3474683 | 0.62 | — | — | |
| SCHEMBL9811395 | 0.61 | — | — | |
| SCHEMBL4363799 | 0.61 | — | — | |
| SCHEMBL21679576 | 0.61 | — | — | |
| SCHEMBL11647862 | 0.55 | — | — | |
| SCHEMBL1639014 | 0.53 | — | — | |
| SCHEMBL3248407 | 0.52 | — | — | |
| SCHEMBL8164987 | 0.51 | — | — | |
| SCHEMBL14488369 | 0.51 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-100455619-C | Novel siloxane-based resin and interlayer insulating film formed using the same | SAMSUNG ELECTRONICS CO LTD (KR) | 2009-01-28 | — | — | CN | claimed |
| CN-118253469-A | Laminate and method for producing same | 株式会社东进世美肯 | 2024-06-28 | — | — | CN | disclosed |
| US-10570311-B2 | Laminate and method for producing same | DONGJIN SEMICHEM CO., LTD. (KR) | 2020-02-25 | — | — | US | disclosed |
| US-20180237658-A1 | LAMINATE AND METHOD FOR PRODUCING SAME | DONGJIN SEMICHEM CO., LTD. (KR) | 2018-08-23 | — | — | US | disclosed |
| CN-100455619-C | Novel siloxane-based resin and interlayer insulating film formed using the same | SAMSUNG ELECTRONICS CO LTD (KR) | 2009-01-28 | — | — | CN | disclosed |
| US-7108922-B2 | Siloxane-based resin and interlayer insulating film formed using the same | SAMSUNG ELECTRONIC CO., LTD. (KR) | 2006-09-19 | — | — | US | disclosed |
| EP-1510537-B1 | Siloxane-based resin and interlayer insulating film formed using the same | SAMSUNG ELECTRONICS CO LTD (KR) | 2006-05-24 | — | — | EP | disclosed |
| JP-2005076031-A | NEW SILOXANE-BASED RESIN AND SEMICONDUCTOR INTERLAYER INSULATING FILM USING THE SAME | SAMSUNG ELECTRONICS CO LTD | 2005-03-24 | — | — | JP | disclosed |
| CN-1597738-A | Novel siloxane-based resin and interlayer insulating film formed using the same | SAMSUNG ELECTRONICS CO LTD (KR) | 2005-03-23 | — | — | CN | disclosed |
| US-20050049382-A1 | Novel siloxane-based resin and interlayer insulating film formed using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-03-03 | — | — | US | disclosed |
| EP-1510537-A1 | Siloxane-based resin and interlayer insulating film formed using the same | Samsung Electronics Co., Ltd (KR) | 2005-03-02 | — | — | EP | disclosed |