SCHEMBL5874669

SCHEMBL5874669

O=C(CCCC(=O)ON1CCCCC1)ON1CCCCC1

nearest known ligand 0.43

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
ATM Q13315 1/20 0.43
SMN1; SMN2 Q16637 3/20 0.38
CYP1A2 P05177 1/20 0.38
MAPK1 P28482 1/20 0.38
TSHR P16473 2/20 0.37
ALDH1A1 P00352 3/20 0.35
POLB P06746 2/20 0.35
MAPT P10636 1/20 0.35
L3MBTL1 Q9Y468 5/20 0.35
MEN1 O00255 1/20 0.35
KMT2A Q03164 1/20 0.35
TDP1 Q9NUW8 1/20 0.35
GLA P06280 1/20 0.34
RAB9A P51151 2/20 0.32
NPC1 O15118 1/20 0.32
HPGD P15428 1/20 0.32
LMNA P02545 1/20 0.32
NAAA Q02083 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14228809 0.98 ATM (0.44) ATMSMN1; SMN2CYP1A2MAPK1TSHR
SCHEMBL5874399 0.95 L3MBTL1 (0.39) ATMSMN1; SMN2CYP1A2MAPK1TSHR
SCHEMBL442464 0.93 L3MBTL1 (0.38) ATMSMN1; SMN2CYP1A2MAPK1ALDH1A1
SCHEMBL3770358 0.92 L3MBTL1 (0.47) ATMSMN1; SMN2CYP1A2MAPK1TSHR
SCHEMBL5874140 0.91 ALDH1A1 (0.38) ATMSMN1; SMN2CYP1A2MAPK1TSHR
SCHEMBL5874880 0.88 L3MBTL1 (0.47) CYP1A2MAPK1ALDH1A1POLBMAPT
SCHEMBL3443989 0.86 SMN1; SMN2 (0.58) SMN1; SMN2CYP1A2MAPK1ALDH1A1POLB
SCHEMBL5737549 0.86 L3MBTL1 (0.55) MAPK1TSHRALDH1A1MAPTL3MBTL1
SCHEMBL442463 0.86 CYP1A2 (0.48) SMN1; SMN2CYP1A2MAPK1TSHRALDH1A1
SCHEMBL24067263 0.85 ATM (0.34) ATMSMN1; SMN2CYP1A2MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7128976-B2 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2006-10-31 US disclosed
US-20030091838-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2003-05-15 US disclosed