Trichloroacetic Acid

Trichloroacetic Acid

SCHEMBL5875342

CCNCC.O=C(O)C(Cl)(Cl)Cl

nearest known ligand 0.56

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

CCKAR

The experimentally established mechanism targets of Trichloroacetic Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.56
TP53 P04637 2/20 0.56
ALDH1A1 P00352 2/20 0.56
FFAR3 O14843 1/20 0.33
KDM4C Q9H3R0 1/20 0.31
MCL1 Q07820 1/20 0.31
CYP2D6 P10635 1/20 0.31
CYP2C19 P33261 1/20 0.31
HIF1A Q16665 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Diethylamine SCHEMBL23674235 0.79
Diethylamine SCHEMBL28252937 0.79 TP53 (0.53) TSHRTP53ALDH1A1FFAR3MCL1
Trichloroacetic Acid SCHEMBL2699210 0.79 ALDH1A1 (0.67) TSHRTP53ALDH1A1FFAR3CYP2D6
Diethylamine SCHEMBL5874292 0.78 TP53 (0.61) TSHRTP53ALDH1A1FFAR3MCL1
Diethylamine SCHEMBL4340639 0.78
Trifluoroacetic Acid SCHEMBL2242176 0.78 TP53 (0.44) TP53ALDH1A1
Trichloroacetic Acid SCHEMBL5874964 0.77 TSHR (0.62) TSHRTP53ALDH1A1FFAR3CYP2D6
Trichloroacetic Acid SCHEMBL5874825 0.76 TSHR (0.71) TSHRTP53ALDH1A1FFAR3CYP2D6
Diethylamine SCHEMBL28871047 0.76 TP53 (0.57) TSHRTP53ALDH1A1FFAR3MCL1
Oxalic Acid SCHEMBL5875439 0.76 TP53 (0.57) TSHRTP53ALDH1A1FFAR3MCL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7128976-B2 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2006-10-31 US disclosed
US-20030091838-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2003-05-15 US disclosed