Tetrapropylammonium

Tetrapropylammonium

SCHEMBL5875348

CCCCC(CC)C(=O)[O-].CCC[N+](CCC)(CCC)CCC

nearest known ligand 0.75

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Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
CA2 P00918 10/20 0.75
MAPK1 P28482 2/20 0.52
CA1 P00915 7/20 0.50
CYP3A4 P08684 2/20 0.47
TSHR P16473 2/20 0.47
NFKB1 P19838 2/20 0.47
NPSR1 Q6W5P4 2/20 0.47
CA7 P43166 1/20 0.39
CA14 Q9ULX7 1/20 0.39
MEN1 O00255 1/20 0.38
ALDH1A1 P00352 1/20 0.38
MAPT P10636 1/20 0.38
KMT2A Q03164 1/20 0.38
SMN1; SMN2 Q16637 1/20 0.38
SLC22A1 O15245 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Tetrabuthylammonium SCHEMBL1070477 0.93 CA2 (0.75) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL8871451 0.91 CA2 (0.72) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL25275599 0.89 CA2 (0.70) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL3649881 0.88 CA2 (0.96) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL3476744 0.87 CA2 (0.78) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL556997 0.86 CA2 (0.84) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL1042096 0.86 CA2 (0.91) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL546693 0.86 CA2 (0.91) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL56210 0.86 CA2 (1.00) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL21569275 0.86 CA2 (0.91) CA2MAPK1CA1CYP3A4TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7128976-B2 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2006-10-31 US disclosed
US-20030091838-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2003-05-15 US disclosed