SCHEMBL588312

SCHEMBL588312

O=C(OCC(F)(F)F)N(S)S

nearest known ligand 0.48

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
HTT P42858 2/20 0.48
FABP7 O15540 1/20 0.32
MEN1 O00255 1/20 0.30
ALDH1A1 P00352 1/20 0.30
TSHR P16473 1/20 0.30
KMT2A Q03164 1/20 0.30
HSD17B10 Q99714 1/20 0.30
CA1 P00915 1/20 0.30
CA2 P00918 1/20 0.30
CA9 Q16790 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2924441 0.76 HTT (0.48) HTTFABP7MEN1ALDH1A1TSHR
SCHEMBL2924105 0.73 HTT (0.45) HTTFABP7MEN1ALDH1A1TSHR
SCHEMBL4951808 0.72 HTT (0.54) HTTFABP7MEN1ALDH1A1TSHR
SCHEMBL871325 0.71 HTT (0.43) HTTFABP7MEN1ALDH1A1TSHR
SCHEMBL8654645 0.71 ALDH1A1 (0.32) ALDH1A1TSHR
SCHEMBL1143909 0.71 HTT (0.59) HTTFABP7MEN1ALDH1A1TSHR
SCHEMBL308851 0.71 HTT (0.59) HTTFABP7MEN1ALDH1A1TSHR
SCHEMBL28916595 0.71 CHRNB2 (0.39)
Phosphonic Acid SCHEMBL8154966 0.70 HTT (0.42) HTTMEN1ALDH1A1TSHRKMT2A
Carbamic Acid SCHEMBL17473082 0.70 HTT (0.42) HTTFABP7MEN1ALDH1A1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8114220-B2 Co-solvent, chelating agent, optionally ion pairing reagent, and optionally surfactant, dense fluid; effectively removes photoresist and/or post-etch residue material from microelectronic device without substantially over-etching underlying silicon-containing layers and metallic interconnect material ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2012-02-14 US claimed
US-20080269096-A1 Formulations for Cleaning Ion-Implanted Photoresist Layers from Microelectronic Devices Advance Technology Materials, Inc. (US) 2008-10-30 US claimed
EP-1879704-A2 FORMULATIONS FOR CLEANING ION-IMPLANTED PHOTORESIST LAYERS FROM MICROELECTRONIC DEVICES ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2008-01-23 EP claimed
WO-2006113621-A2 FORMULATIONS FOR CLEANING ION-IMPLANTED PHOTORESIST LAYERS FROM MICROELECTRONIC DEVICES ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2006-10-26 WO claimed
US-8114220-B2 Co-solvent, chelating agent, optionally ion pairing reagent, and optionally surfactant, dense fluid; effectively removes photoresist and/or post-etch residue material from microelectronic device without substantially over-etching underlying silicon-containing layers and metallic interconnect material ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2012-02-14 US disclosed
US-20080269096-A1 Formulations for Cleaning Ion-Implanted Photoresist Layers from Microelectronic Devices Advance Technology Materials, Inc. (US) 2008-10-30 US disclosed
EP-1879704-A2 FORMULATIONS FOR CLEANING ION-IMPLANTED PHOTORESIST LAYERS FROM MICROELECTRONIC DEVICES ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2008-01-23 EP disclosed
WO-2006113621-A2 FORMULATIONS FOR CLEANING ION-IMPLANTED PHOTORESIST LAYERS FROM MICROELECTRONIC DEVICES ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2006-10-26 WO disclosed
US-6638749-B1 Fluoroether sulfate, fluoroether- polyethylene glycol block copolymer, fluoroether sorbitol or fluoroether dithicarbamate chelate; solubilizes proteins, peptides and amino acids GENENCOR INTERNATIONAL, INC. 2003-10-28 US disclosed
US-6562605-B1 Extraction of water soluble biopolymers from a fluid; form carbon dioxide/surfactant mixture, mix with water soluble biopolymer, recover biopolymer from mixture GENENCOR INTERNATIONAL, INC. 2003-05-13 US disclosed
WO-1997018234-A2 EXTRACTION OF PROTEINS INTO CARBON DIOXIDE GENENCOR INTERNATIONAL, INC. (US) 1997-05-22 WO disclosed