Known targets — ChEMBL curated mechanism
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
The experimentally established mechanism targets of Sulfuric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | DNM1 | Q05193 | 7/20 | 0.71 |
| ▸ | APAF1 | O14727 | 1/20 | 0.65 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.65 |
| ▸ | RAD52 | P43351 | 1/20 | 0.65 |
| ▸ | ENPP2 | Q13822 | 3/20 | 0.55 |
| ▸ | MEN1 | O00255 | 4/20 | 0.52 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.52 |
| ▸ | APEX1 | P27695 | 3/20 | 0.52 |
| ▸ | NFKB1 | P19838 | 2/20 | 0.52 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.52 |
| ▸ | ACHE | P22303 | 2/20 | 0.52 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.52 |
| ▸ | PMP22 | Q01453 | 2/20 | 0.52 |
| ▸ | LMNA | P02545 | 2/20 | 0.52 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.52 |
| ▸ | HRH3 | Q9Y5N1 | 1/20 | 0.52 |
| ▸ | TSHR | P16473 | 1/20 | 0.52 |
| ▸ | RAB9A | P51151 | 1/20 | 0.52 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.50 |
| ▸ | HTT | P42858 | 1/20 | 0.50 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Sulfuric Acid SCHEMBL28359156 | 1.00 | DNM1 (0.71) | DNM1APAF1HSP90AA1RAD52ENPP2 | |
| Sulfuric Acid SCHEMBL9698125 | 1.00 | DNM1 (0.71) | DNM1APAF1HSP90AA1RAD52ENPP2 | |
| Sulfuric Acid SCHEMBL721283 | 1.00 | DNM1 (0.71) | DNM1APAF1HSP90AA1RAD52ENPP2 | |
| Sulfuric Acid SCHEMBL2004006 | 1.00 | DNM1 (0.71) | DNM1APAF1HSP90AA1RAD52ENPP2 | |
| Cetrimonium SCHEMBL716035 | 1.00 | DNM1 (0.71) | DNM1APAF1HSP90AA1RAD52ENPP2 | |
| Sulfuric Acid SCHEMBL6684704 | 1.00 | DNM1 (0.71) | DNM1APAF1HSP90AA1RAD52ENPP2 | |
| Sulfuric Acid SCHEMBL10702836 | 1.00 | DNM1 (0.71) | DNM1APAF1HSP90AA1RAD52ENPP2 | |
| Sulfuric Acid SCHEMBL9464362 | 1.00 | DNM1 (0.71) | DNM1APAF1HSP90AA1RAD52ENPP2 | |
| Sulfuric Acid SCHEMBL11744116 | 1.00 | DNM1 (0.71) | DNM1APAF1HSP90AA1RAD52ENPP2 | |
| Sulfuric Acid SCHEMBL27910535 | 1.00 | DNM1 (0.71) | DNM1APAF1HSP90AA1RAD52ENPP2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8114220-B2 | Co-solvent, chelating agent, optionally ion pairing reagent, and optionally surfactant, dense fluid; effectively removes photoresist and/or post-etch residue material from microelectronic device without substantially over-etching underlying silicon-containing layers and metallic interconnect material | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2012-02-14 | — | — | US | claimed |
| US-20080269096-A1 | Formulations for Cleaning Ion-Implanted Photoresist Layers from Microelectronic Devices | Advance Technology Materials, Inc. (US) | 2008-10-30 | — | — | US | claimed |
| EP-1879704-A2 | FORMULATIONS FOR CLEANING ION-IMPLANTED PHOTORESIST LAYERS FROM MICROELECTRONIC DEVICES | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2008-01-23 | — | — | EP | claimed |
| WO-2006113621-A2 | FORMULATIONS FOR CLEANING ION-IMPLANTED PHOTORESIST LAYERS FROM MICROELECTRONIC DEVICES | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2006-10-26 | — | — | WO | claimed |
| US-8114220-B2 | Co-solvent, chelating agent, optionally ion pairing reagent, and optionally surfactant, dense fluid; effectively removes photoresist and/or post-etch residue material from microelectronic device without substantially over-etching underlying silicon-containing layers and metallic interconnect material | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2012-02-14 | — | — | US | disclosed |
| US-20080269096-A1 | Formulations for Cleaning Ion-Implanted Photoresist Layers from Microelectronic Devices | Advance Technology Materials, Inc. (US) | 2008-10-30 | — | — | US | disclosed |
| EP-1879704-A2 | FORMULATIONS FOR CLEANING ION-IMPLANTED PHOTORESIST LAYERS FROM MICROELECTRONIC DEVICES | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2008-01-23 | — | — | EP | disclosed |
| WO-2006113621-A2 | FORMULATIONS FOR CLEANING ION-IMPLANTED PHOTORESIST LAYERS FROM MICROELECTRONIC DEVICES | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2006-10-26 | — | — | WO | disclosed |