SCHEMBL5961381

SCHEMBL5961381

CCC(CC(C)(C)C(=O)OCCO)c1ccccc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
RIPK1 Q13546 1/20 0.40
CYP1A2 P05177 2/20 0.40
CYP2D6 P10635 2/20 0.40
SMN1; SMN2 Q16637 2/20 0.40
PKM P14618 1/20 0.40
NPSR1 Q6W5P4 1/20 0.40
CHRM1 P11229 4/20 0.39
CHRM3 P20309 4/20 0.39
CHRM2 P08172 3/20 0.39
CHRM4 P08173 3/20 0.39
CHRM5 P08912 1/20 0.39
PRKCA P17252 1/20 0.38
PRKCD Q05655 1/20 0.38
LMNA P02545 2/20 0.38
MAPT P10636 1/20 0.38
MEN1 O00255 2/20 0.37
KMT2A Q03164 2/20 0.37
ATM Q13315 1/20 0.37
L3MBTL1 Q9Y468 1/20 0.37
ALDH1A1 P00352 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5961379 0.92 KDM4E (0.43) RIPK1CYP1A2CYP2D6SMN1; SMN2PKM
SCHEMBL17403417 0.92 CHRM2 (0.40) RIPK1CYP1A2CYP2D6SMN1; SMN2PKM
SCHEMBL18119984 0.89 CHRM2 (0.39) RIPK1CYP1A2CYP2D6SMN1; SMN2PKM
SCHEMBL17403421 0.88 CYP1A2 (0.45) RIPK1CYP1A2CYP2D6SMN1; SMN2PKM
SCHEMBL17298036 0.88 RIPK1 (0.34) RIPK1CYP1A2CYP2D6SMN1; SMN2PKM
SCHEMBL13864208 0.88 RIPK1 (0.36) RIPK1CYP1A2CYP2D6SMN1; SMN2PKM
SCHEMBL5961384 0.87 TSHR (0.43) CYP1A2CYP2D6SMN1; SMN2PKMNPSR1
SCHEMBL5961385 0.87 TSHR (0.45) CYP1A2CYP2D6SMN1; SMN2PKMNPSR1
SCHEMBL18922371 0.87 ESR1 (0.43) CYP1A2CYP2D6SMN1; SMN2CHRM1CHRM3
SCHEMBL5961369 0.87 PIN1 (0.46) CYP1A2CYP2D6SMN1; SMN2PKMNPSR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11762292-B2 Coating compositions for use with an overcoated photoresist ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2023-09-19 US disclosed
US-20230250209-A1 Polymer Compound, and Resin Composition Containing Said Compound NIPPON KAYAKU KABUSHIKI KAISHA (JP) 2023-08-10 US disclosed
US-10032638-B2 Method of fabricating pattern structure SAMSUNG ELECTRONICS CO., LTD. (KR) 2018-07-24 US disclosed
US-20170129972-A1 METHODS OF FORMING PATTERNS OF SEMICONDUCTOR DEVICES TOKYO OHKA KOGYO CO., LTD. (JP) 2017-05-11 US disclosed
US-9558987-B2 Gap-fill methods DOW GLOBAL TECHNOLOGIES LLC (US) 2017-01-31 US disclosed
US-20160343575-A1 METHOD OF FABRICATING PATTERN STRUCTURE SAMSUNG ELECTRONICS CO., LTD. (KR) 2016-11-24 US disclosed
US-20160187778-A1 COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2016-06-30 US disclosed
US-9324604-B2 Gap-fill methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2016-04-26 US disclosed
US-20160005641-A1 GAP-FILL METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2016-01-07 US disclosed
US-8168694-B2 Ink composition, ink set, ink for inkjet recording, ink set for inkjet recording, and ink cartridge for inkjet recording FUJIFILM CORPORATION (JP) 2012-05-01 US disclosed