SCHEMBL599023

SCHEMBL599023

NCCC[SiH2]O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22911698 0.93
Ethylene Glycol SCHEMBL29044363 0.90 TSHR (0.41)
SCHEMBL22911644 0.90 DNM1 (0.50)
SCHEMBL29003974 0.77 CA12 (0.56)
SCHEMBL6901948 0.74 CA12 (0.52)
SCHEMBL2598229 0.69
SCHEMBL7795070 0.69
SCHEMBL5815106 0.65
SCHEMBL31197290 0.64
SCHEMBL28569011 0.64

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 258 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12338369-B2 Nitride inhibitors for high selectivity of TiN—SiN CMP applications CMC MATERIALS LLC (US) 2025-06-24 US claimed
US-20240199917-A1 NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TiN-SiN CMP APPLICATIONS CMC MATERIALS LLC 2024-06-20 US claimed
EP-4056659-B1 NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TIN-SIN CMP APPLICATIONS CMC MAT LLC (US) 2024-04-03 EP claimed
CN-116134588-A Composition and method for selectively etching silicon nitride film 恩特格里斯公司 2023-05-16 CN claimed
EP-3681963-B1 NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TIN-SIN CMP APPLICATIONS CMC MAT INC (US) 2023-05-10 EP claimed
US-11492707-B2 Method for specifically adjusting the electrical conductivity of conversion coatings CHEMETALL GMBH (DE) 2022-11-08 US claimed
EP-4056659-A1 NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TIN-SIN CMP APPLICATIONS CMC Materials, Inc. (US) 2022-09-14 EP claimed
CN-111108161-B High selectivity nitride inhibitors for TiN-SiN CMP applications CMC材料股份有限公司 2022-06-14 CN claimed
EP-3280830-B1 METHOD FOR SPECIFICALLY ADJUSTING THE ELECTRICAL CONDUCTIVITY OF CONVERSION COATINGS CHEMETALL GMBH (DE) 2021-03-31 EP claimed
EP-3681963-A2 NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TIN-SIN CMP APPLICATIONS Cabot Microelectronics Corporation (US) 2020-07-22 EP claimed
CN-1326199-C Polishing composition comprising inhibitor of tungsten erosion CABOT CORP (US) 2007-07-11 CN claimed
CN-1966594-A Polishing composition for metal cmp CABOT MICROELECTRONICS CORP (US) 2007-05-23 CN claimed
EP-0896042-B1 A polishing composition including an inhibitor of tungsten etching CABOT MICROELECTRONICS CORP (US) 2005-02-09 EP claimed
EP-1458543-A1 CONTINUOUS PROCESS FOR IMPREGNATING SOLID ADSORBENT PARTICLES INTO SHAPED MICRO-CAVITY FIBERS AND FIBER FILTERS Philip Morris Products Inc. (US) 2004-09-22 EP claimed
CN-1142237-C Stepped synthesis process of preparing stable inorganics-based solid tunable dye laser medium 浙江大学 2004-03-17 CN claimed
WO-2003047836-A1 CONTINUOUS PROCESS FOR IMPREGNATING SOLID ADSORBENT PARTICLES INTO SHAPED MICRO-CAVITY FIBERS AND FIBER FILTERS PHILIP MORRIS PRODUCTS S.A. (US) 2003-06-12 WO claimed
CN-1272221-A Polishing composition comprising inhibitor of tungsten erosion CABOT CORP (US) 2000-11-01 CN claimed
US-6136711-A CHEMICAL MECHANICAL POLISHING MIXTURE COMPRISING A STABILIZER TO MINIMIZE ETCHING AND CORROSION CABOT CORPORATION (US) 2000-10-24 US claimed
EP-0896042-A1 A polishing composition including an inhibitor of tungsten etching Cabot Corporation (US) 1999-02-10 EP claimed
WO-1999005706-A1 A POLISHING COMPOSITION INCLUDING AN INHIBITOR OF TUNGSTEN ETCHING CABOT CORPORATION (US) 1999-02-04 WO claimed