⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL524505 | 0.87 | — | — | |
| SCHEMBL8767588 | 0.87 | — | — | |
| SCHEMBL2206006 | 0.87 | — | — | |
| SCHEMBL937425 | 0.87 | — | — | |
| SCHEMBL43605 | 0.82 | — | — | |
| SCHEMBL10426231 | 0.78 | — | — | |
| SCHEMBL55736 | 0.67 | — | — | |
| SCHEMBL4076325 | 0.67 | — | — | |
| SCHEMBL15355465 | 0.67 | — | — | |
| SCHEMBL5087331 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-5917201-A | Light emitting diode with asymmetrical energy band structure | EPISTAR CO. (TW) | 1999-06-29 | — | — | US | claimed |
| EP-0539328-B1 | Process for grain refining aluminium casting alloy, especially aluminium-silicon casting alloys | RHEINFELDEN ALUMINIUM GMBH (DE) | 1997-08-20 | — | — | EP | claimed |
| US-5250125-A | Adding gallium or indium phosphide nucleating agent | ALUSUISSE-LONZA SERVICES LTD. (CH) | 1993-10-05 | — | — | US | claimed |
| US-20230152224-A1 | OPTICAL SOURCES FOR FLUORESCENT LIFETIME ANALYSIS | Quantum-Si Incorporated (US) | 2023-05-18 | — | — | US | disclosed |
| US-11567006-B2 | Optical sources for fluorescent lifetime analysis | Quantum-Si Incorporated (US) | 2023-01-31 | — | — | US | disclosed |
| EP-4050886-A1 | OPTICAL SOURCES FOR FLUORESCENT LIFETIME ANALYSIS | Quantum-si Incorporated (US) | 2022-08-31 | — | — | EP | disclosed |
| EP-3298666-B1 | OPTICAL SOURCES FOR FLUORESCENT LIFETIME ANALYSIS | QUANTUM SI INC (US) | 2021-12-29 | — | — | EP | disclosed |
| US-20200158640-A1 | OPTICAL SOURCES FOR FLUORESCENT LIFETIME ANALYSIS | Quantum-Si Incorporated (US) | 2020-05-21 | — | — | US | disclosed |
| US-10605730-B2 | Optical sources for fluorescent lifetime analysis | Quantum-Si Incorporated (US) | 2020-03-31 | — | — | US | disclosed |
| EP-3298666-A2 | OPTICAL SOURCES FOR FLUORESCENT LIFETIME ANALYSIS | Quantum-si Incorporated (US) | 2018-03-28 | — | — | EP | disclosed |
| US-20160370513-A1 | OPTOELECTRONIC DEVICE | OSRAM OPTO SEMICONDUCTORS GMBH (DE) | 2016-12-22 | — | — | US | disclosed |
| US-20160341664-A1 | OPTICAL SOURCES FOR FLUORESCENT LIFETIME ANALYSIS | Quantum-Si Incorporated (US) | 2016-11-24 | — | — | US | disclosed |
| US-9459383-B2 | Optoelectronic device | OSRAM OPTO SEMICONDUCTORS GMBH (DE) | 2016-10-04 | — | — | US | disclosed |
| US-20150346397-A1 | OPTOELECTRONIC DEVICE | OSRAM OPTO SEMICONDUCTORS GMBH (DE) | 2015-12-03 | — | — | US | disclosed |
| US-7148417-B1 | GaP/silicon tandem solar cell with extended temperature range | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION (US) | 2006-12-12 | — | — | US | disclosed |
| US-5358897-A | Providing on gallium arsenide substrate, aluminum gallium arsenide buffer layer, indium aluminum gallium phosphide cladding layer, indium gallium phosphide active layer and second indium aluminum gallium phosphide cladding layer | U.S. PHILIPS CORPORATION (US) | 1994-10-25 | — | — | US | disclosed |
| US-5250125-A | Adding gallium or indium phosphide nucleating agent | ALUSUISSE-LONZA SERVICES LTD. (CH) | 1993-10-05 | — | — | US | disclosed |
| US-4963508-A | FORMIGN A GALLIUM PHSOPHIDE INTERMEDIATE LAYER ON AN INCLINED SILICON SUBSTRATE | DAIDO TOKUSHUKO KABUSHIKI KAISHA (JP) | 1990-10-16 | — | — | US | disclosed |
| US-4928154-A | IMPROVED CRYSTALLINITY | DAIDO TOKUSHUKO KABUSHIKI KAISHA (JP) | 1990-05-22 | — | — | US | disclosed |
| EP-0214610-A2 | Epitaxial gallium arsenide semiconductor wafer and method of producing the same | DAIDO TOKUSHUKO KABUSHIKI KAISHA (JP) | 1987-03-18 | — | — | EP | disclosed |