SCHEMBL601715

SCHEMBL601715

Clc1ccc(-c2c3ccccc3nc3ccccc23)cc1

nearest known ligand 0.57

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
L3MBTL1 Q9Y468 2/20 0.57
KDM4E B2RXH2 1/20 0.57
LMNA P02545 1/20 0.57
GAA P10253 1/20 0.57
ESR1 P03372 5/20 0.56
ESR2 Q92731 5/20 0.56
MAOA P21397 1/20 0.56
MAOB P27338 1/20 0.56
TNKS O95271 1/20 0.53
GUSB P08236 1/20 0.53
TNKS2 Q9H2K2 1/20 0.53
PARP2 Q9UGN5 1/20 0.53
CYP1A2 P05177 1/20 0.50
ATM Q13315 2/20 0.47
NPC1 O15118 1/20 0.47
RAB9A P51151 1/20 0.47
SMN1; SMN2 Q16637 1/20 0.47
POLB P06746 1/20 0.46
MAPK1 P28482 1/20 0.46
TDP1 Q9NUW8 1/20 0.46

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29446766 1.00 L3MBTL1 (0.57) L3MBTL1KDM4ELMNAGAAESR1
SCHEMBL29059116 0.85 ESR1 (0.67) KDM4ELMNAGAAESR1ESR2
SCHEMBL26462184 0.85 ESR1 (0.68) KDM4ELMNAGAAESR1ESR2
SCHEMBL194068 0.84 ESR1 (0.73) KDM4ELMNAGAAESR1ESR2
SCHEMBL29514776 0.84 ESR1 (0.73) KDM4ELMNAGAAESR1ESR2
SCHEMBL8956254 0.83 KDM4E (0.68) L3MBTL1KDM4ELMNAGAAESR1
SCHEMBL9971854 0.82 CYP1A2 (0.67) L3MBTL1KDM4ELMNAGAAESR1
Ammonia Solution, Strong SCHEMBL28289396 0.82 ESR1 (0.70) KDM4ELMNAGAAESR1ESR2
SCHEMBL28139140 0.82 ESR1 (0.70) KDM4ELMNAGAAESR1ESR2
SCHEMBL5947997 0.82 CYP1A2 (0.57) L3MBTL1KDM4ELMNAGAAESR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 151 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-113801291-B Photosensitive resin composition, photosensitive dry film resist and manufacturing method of PCB 杭州福斯特电子材料有限公司 2023-05-12 CN claimed
CN-113174040-B Photopolymerizable monomer and high-resolution high-adhesion LDI dry film resist composed of photopolymerizable monomer 杭州福斯特电子材料有限公司 2022-05-17 CN claimed
CN-110357989-B Tertiary amine photosensitizer, preparation method thereof, photosensitive resin composition containing tertiary amine photosensitizer and application of photosensitive resin composition 常州强力电子新材料股份有限公司 2022-04-22 CN claimed
CN-114114837-A Dry film resist and preparation method thereof 杭州福斯特电子材料有限公司 2022-03-01 CN claimed
CN-113801291-A Photosensitive resin composition, photosensitive dry film resist and manufacturing method of PCB 浙江福斯特新材料研究院有限公司 2021-12-17 CN claimed
CN-108241259-B Resist composition with good hole masking function and capable of directly depicting, exposing and imaging 杭州福斯特电子材料有限公司 2021-08-10 CN claimed
CN-113174040-A Photopolymerizable monomer and high-resolution high-adhesion LDI dry film resist formed by same 浙江福斯特新材料研究院有限公司 2021-07-27 CN claimed
CN-109976095-A It is a kind of directly to describe the anti-corrosion agent composition and layered product being imaged by light 杭州福斯特应用材料股份有限公司 2019-07-05 CN claimed
CN-108241259-A A kind of anti-corrosion agent composition that can directly describe exposure image with good hole masking function 浙江福斯特新材料研究院有限公司 2018-07-03 CN claimed
US-5346805-A Initiator comprising an onium compound and an acridine derivative; printing plate, resist, photomask FUJI PHOTO FILM CO., LTD. (JP) 1994-09-13 US claimed
WO-2026105768-A1 POLYMER, PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE ELEMENT, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR FORMING WIRING PATTERN 株式会社レゾナック 2026-05-21 WO disclosed
US-12560867-B2 Photosensitive element and method for producing photosensitive element RESONAC CORPORATION (JP) 2026-02-24 US disclosed
US-20250306461-A1 PHOTOSENSITIVE ELEMENT AND METHOD FOR FORMING RESIST PATTERN RESONAC CORPORATION (JP) 2025-10-02 US disclosed
US-20250278024-A1 PHOTOSENSITIVE ELEMENT, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR MANUFACTURING PRINTED WIRING BOARD RESONAC CORPORATION (JP) 2025-09-04 US disclosed
US-12353130-B2 Photosensitive resin composition and photosensitive resin multilayer body ASAHI KASEI KABUSHIKI KAISHA (JP) 2025-07-08 US disclosed
CN-101449208-A Photosensitive resin composition and laminate ASAHI KASEI EMD CORP (JP) 2009-06-03 CN disclosed
CN-101438208-A Photosensitive resin composition ASAHI KASEI EMD CORP (JP) 2009-05-20 CN disclosed
CN-1945429-A Photosensitive resin composition and photosensitive resin laminate using the same ASAHI KASEI DENSHI K K (JP) 2007-04-11 CN disclosed
US-5346805-A Initiator comprising an onium compound and an acridine derivative; printing plate, resist, photomask FUJI PHOTO FILM CO., LTD. (JP) 1994-09-13 US disclosed
US-4587200-A Photopolymerizable composition comprising an acridine and a heterocyclic thiol compound as a photopolymerization initiator and a photographic process using said photopolymerizable composition FUJI PHOTO FILM CO., LTD. (JP) 1986-05-06 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12560867-B2 Photosensitive element and method for producing photosensitive element TERB1, PRDM9, PRPF8 L3MBTL1 1878/4885KDM4E 575/4885LMNA 2646/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.