SCHEMBL60355

SCHEMBL60355

CC(c1ccccc1)C(C)(O)C(=O)O

nearest known ligand 0.47

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 2/20 0.42
MEN1 O00255 1/20 0.42
CYP2D6 P10635 3/20 0.41
SRC P12931 1/20 0.41
CYP2C9 P11712 1/20 0.41
HIF1A Q16665 1/20 0.41
CYP1A2 P05177 1/20 0.41
ATM Q13315 1/20 0.41
L3MBTL1 Q9Y468 1/20 0.41
LMNA P02545 2/20 0.40
MAPK1 P28482 1/20 0.40
ALOX5 P09917 1/20 0.40
SLC6A4 P31645 1/20 0.40
CYP2C19 P33261 1/20 0.39
CES2 O00748 1/20 0.39
CES1 P23141 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14246913 0.84 KMT2A (0.47) KMT2AMEN1CYP2D6SRCHIF1A
SCHEMBL29008441 0.81 CYP2D6 (0.43) KMT2AMEN1CYP2D6SRCATM
SCHEMBL8053595 0.81 CYP2D6 (0.43) KMT2ACYP2D6SRCCYP1A2ATM
SCHEMBL173884 0.81 L3MBTL1 (0.43) KMT2ACYP2D6SRCCYP1A2ATM
SCHEMBL27893724 0.80 KMT2A (0.41) KMT2AMEN1CYP2D6SRCATM
SCHEMBL2032641 0.79 CYP2D6 (0.50) CYP2D6SRCCYP2C9HIF1ACYP1A2
SCHEMBL2031549 0.79 CYP2D6 (0.50) CYP2D6SRCCYP2C9HIF1ACYP1A2
Acetic Acid SCHEMBL27497152 0.79 CYP2D6 (0.41) KMT2AMEN1CYP2D6SRCATM
SCHEMBL4976204 0.79 AOC3 (0.48) KMT2ACYP2D6SRCATML3MBTL1
SCHEMBL28369056 0.79 AOC3 (0.48) KMT2ACYP2D6SRCATML3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8906598-B2 Pattern forming method, method for manufacturing semiconductor device, and material for forming coating layer of resist pattern FUJITSU LIMITED (JP) 2014-12-09 US disclosed
US-8476346-B2 Resist pattern thickening material, semiconductor device, and production method thereof FUJITSU LIMITED (JP) 2013-07-02 US disclosed
US-20120126372-A1 RESIST PATTERN THICKENING MATERIAL AND PROCESS FOR FORMING RESIST PATTERN, AND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2012-05-24 US disclosed
US-8129092-B2 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LIMITED (JP) 2012-03-06 US disclosed
US-20110250541-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND MATERIAL FOR FORMING COATING LAYER OF RESIST PATTERN FUJITSU LIMITED (JP) 2011-10-13 US disclosed
US-20110101508-A1 RESIST PATTERN THICKENING MATERIAL, SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD THEREOF FUJITSU LIMITED (JP) 2011-05-05 US disclosed
CN-1975571-B Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LTD 2011-04-06 CN disclosed
EP-1793274-A2 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LIMITED (JP) 2007-06-06 EP disclosed
CN-1975571-A Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LTD (JP) 2007-06-06 CN disclosed
US-20070123623-A1 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LIMITED (JP) 2007-05-31 US disclosed