SCHEMBL6052010

SCHEMBL6052010

Oc1c(-c2ccccc2)ccc2[nH]nnc12

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HDAC4 P56524 1/20 0.39
HDAC2 Q92769 1/20 0.39
HDAC8 Q9BY41 1/20 0.39
HDAC6 Q9UBN7 1/20 0.39
BACE1 P56817 1/20 0.36
ALOX5 P09917 1/20 0.36
HNF4A P41235 1/20 0.36
RPS6KA3 P51812 2/20 0.36
DPP4 P27487 1/20 0.36
ALDH1A1 P00352 1/20 0.35
HPGD P15428 1/20 0.35
BCL2L1 Q07817 1/20 0.35
HSD17B10 Q99714 1/20 0.35
GYS1 P13807 1/20 0.35
METAP2 P50579 2/20 0.34
AKT2 P31751 3/20 0.33
AKT1 P31749 2/20 0.33
CHEK1 O14757 1/20 0.33
MAP4K1 Q92918 1/20 0.33
ESR2 Q92731 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9171828 0.98 HDAC4 (0.38) HDAC4HDAC2HDAC8HDAC6BACE1
SCHEMBL27412736 0.84 AKT2 (0.38) DPP4METAP2AKT2AKT1CHEK1
SCHEMBL80394 0.79 CHEK1 (0.37) ALOX5RPS6KA3GYS1AKT2CHEK1
SCHEMBL26677406 0.79 AKT2 (0.41) DPP4METAP2AKT2AKT1CHEK1
SCHEMBL29359068 0.79 CHEK1 (0.37) ALOX5RPS6KA3GYS1AKT2CHEK1
SCHEMBL5612694 0.79 METAP2 (0.37) RPS6KA3DPP4ALDH1A1HPGDHSD17B10
SCHEMBL6052039 0.79 TP53 (0.38) HNF4ADPP4ALDH1A1AKT2AKT1
SCHEMBL6052043 0.79 ENPP2 (0.43) HDAC6ALDH1A1HPGDLMNAF2
SCHEMBL8836008 0.78 CHEK1 (0.36) ALOX5RPS6KA3GYS1AKT2CHEK1
SCHEMBL6897857 0.78 CHEK1 (0.36) ALOX5RPS6KA3GYS1AKT2CHEK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10283724-B2 Method for producing an organic CMOS circuit and organic CMOS circuit protected against UV radiation COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (FR) 2019-05-07 US disclosed
EP-3031087-B1 METHOD FOR PRODUCING AN ORGANIC CMOS CIRCUIT AND ORGANIC CMOS CIRCUIT PROTECTED AGAINST UV RADIATION COMMISSARIAT ENERGIE ATOMIQUE (FR) 2018-11-07 EP disclosed
US-20180205027-A1 Method For Producing An Organic CMOS Circuit And Organic CMOS Circuit Protected Against UV Radiation COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (FR) 2018-07-19 US disclosed
US-9935282-B2 Method for producing an organic CMOS circuit and organic CMOS circuit protected against UV radiation COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES (FR) 2018-04-03 US disclosed
EP-3031087-A1 METHOD FOR PRODUCING AN ORGANIC CMOS CIRCUIT AND ORGANIC CMOS CIRCUIT PROTECTED AGAINST UV RADIATION Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR) 2016-06-15 EP disclosed
US-20160141529-A1 Method For Producing An Organic CMOS Circuit And Organic CMOS Circuit Protected Against UV Radiation COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (FR) 2016-05-19 US disclosed
WO-2015019004-A1 METHOD FOR PRODUCING AN ORGANIC CMOS CIRCUIT AND ORGANIC CMOS CIRCUIT PROTECTED AGAINST UV RADIATION COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (FR) 2015-02-12 WO disclosed
EP-1162503-B1 Method of processing silver halide color photographic light-sensitive material FUJI PHOTO FILM CO LTD (JP) 2006-03-22 EP disclosed
US-6727050-B2 COLOR PHOTOGRAPHY FUJI PHOTO FILM CO., LTD. (JP) 2004-04-27 US disclosed
US-6686141-B2 SUPPORT HAVING LIGHT-SENSITIVE SILVER HALIDE EMULSION LAYER AND A NON-LIGHT-SENSITIVE LAYER; >60% OF THE PROJECTED AREA OF HALIDE GRAINS ARE TABULAR WITH AN AVERAGE ASPECT RATIO OF >5; PAG OF 4-8.5; STORAGE STABILITY; RAPID DEVELOPMENT FUJI PHOTO FILM CO., LTD. (JP) 2004-02-03 US disclosed
US-6432624-B1 EXPOSING MATERIAL UNDER NATURAL LIGHT OR ARTIFICIAL LIGHT; COLOR DEVELOPING THE EXPOSED MATERIAL SO THAT THE TABULAR GRAINS HAVE 3.0 OR MORE (AVERAGE) DEVELOPMENT INITIATING POINTS PER GRAIN AT THE COMPLETION OF DEVELOPMENT FUJI PHOTO FILM CO., LTD. (JP) 2002-08-13 US disclosed
US-20020086249-A1 Method of processing silver halide color photographic lightsensitive material FUJIFILM CORPORATION (JP) 2002-07-04 US disclosed
US-20020055070-A1 Silver halide photographic light-sensitive material and method of forming image therein FUJI PHOTO FILM CO., LTD. 2002-05-09 US disclosed
US-20020031731-A1 Method of processing silver halide color photographic light-sensitive material FUJIFILM CORPORATION (JP) 2002-03-14 US disclosed
EP-1162503-A2 Method of processing silver halide color photographic light-sensitive material FUJI PHOTO FILM CO., LTD. (JP) 2001-12-12 EP disclosed
EP-1002828-A2 Transparent construction sheet Petglass, S.L. (ES) 2000-05-24 EP disclosed
EP-0131161-B1 HEAT-DEVELOPABLE COLOR PHOTOSENSITIVE ELEMENT KONICA CORPORATION (JP) 1988-11-02 EP disclosed
US-4770989-A USING A THERMAL SOLVENT AND GELATIN/POLYVINYPYRROLIDONE POLYMER MIXTURE; DIFFUSION TRANSFER QUALITY IMAGE KONISHIROKU PHOTO INDUSTRY CO., LTD. (JP) 1988-09-13 US disclosed
EP-0131161-A2 Heat-developable color photosensitive element KONICA CORPORATION (JP) 1985-01-16 EP disclosed
US-4451561-A Heat-development-type image recording material KONISHIROKU PHOTO INDUSTRY CO., LTD. (JP) 1984-05-29 US disclosed