SCHEMBL609677

SCHEMBL609677

Cc1cccc(C(=O)OOC(C)(C)CCC(C)C)c1

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ADRB2 P07550 2/20 0.45
ADRB1 P08588 2/20 0.45
ADRB3 P13945 2/20 0.45
RAB9A P51151 3/20 0.41
L3MBTL1 Q9Y468 2/20 0.41
MAPT P10636 2/20 0.41
TDP1 Q9NUW8 2/20 0.41
ALDH1A1 P00352 1/20 0.41
TSHR P16473 1/20 0.41
HSD17B10 Q99714 1/20 0.41
TAS1R3 Q7RTX0 1/20 0.40
TAS1R1 Q7RTX1 1/20 0.40
PARP1 P09874 1/20 0.40
ATM Q13315 1/20 0.39
NPC1 O15118 1/20 0.39
MEN1 O00255 1/20 0.39
ESR1 P03372 1/20 0.39
POLB P06746 1/20 0.39
KMT2A Q03164 1/20 0.39
ESR2 Q92731 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29498969 0.90 ADRB2 (0.49) ADRB2ADRB1ADRB3RAB9AMAPT
SCHEMBL15902738 0.90 ADRB2 (0.49) ADRB2ADRB1ADRB3RAB9AMAPT
SCHEMBL95780 0.90 ADRB2 (0.49) ADRB2ADRB1ADRB3RAB9AMAPT
SCHEMBL3629558 0.85 TDP1 (0.58) ADRB2ADRB1ADRB3L3MBTL1MAPT
SCHEMBL2787303 0.81 ADRB2 (0.39) ADRB2ADRB1ADRB3RAB9AL3MBTL1
SCHEMBL2787300 0.81 ADRB2 (0.47) ADRB2ADRB1ADRB3RAB9AL3MBTL1
SCHEMBL20457633 0.80 ALDH1A1 (0.53) RAB9ATDP1ALDH1A1TSHRHSD17B10
SCHEMBL23037380 0.78 TDP1 (0.66) ADRB2ADRB1ADRB3RAB9AMAPT
SCHEMBL9067303 0.77 ADRB2 (0.43) ADRB2ADRB1ADRB3RAB9AMAPT
SCHEMBL2787301 0.77 ADRB2 (0.44) ADRB2ADRB1ADRB3RAB9AL3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20140284306-A1 METHOD FOR MANUFACTURING POROUS STRUCTURE AND METHOD FOR FORMING PATTERN KABUSHIKI KAISHA TOSHIBA (JP) 2014-09-25 US disclosed
US-8778201-B2 Method for manufacturing porous structure and method for forming pattern KABUSHIKI KAISHA TOSHIBA (JP) 2014-07-15 US disclosed
US-8435416-B2 Method for manufacturing porous structure and method for forming pattern KABUSHIKI KAISHA TOSHIBA (JP) 2013-05-07 US disclosed
US-8394877-B2 Method for manufacturing porous structure and method for forming pattern KABUSHIKA KAISHA TOSHIBA (JP) 2013-03-12 US disclosed
US-20120037594-A1 METHOD FOR MANUFACTURING POROUS STRUCTURE AND METHOD FOR FORMING PATTERN ASAKAWA KOJI (JP) 2012-02-16 US disclosed
US-20120041121-A1 METHOD FOR MANUFACTURING POROUS STRUCTURE AND METHOD FOR FORMING PATTERN ASAKAWA KOJI (JP) 2012-02-16 US disclosed
US-20120037595-A1 METHOD FOR MANUFACTURING POROUS STRUCTURE AND METHOD FOR FORMING PATTERN ASAKAWA KOJI (JP) 2012-02-16 US disclosed
US-8043520-B2 Method for manufacturing porous structure and method for forming pattern KABUSHIKI KAISHA TOSHIBA (JP) 2011-10-25 US disclosed
US-20090130380-A1 METHOD FOR MANUFACTURING POUROUS STRUCTURE AND METHOD FOR FORMING PATTERN ASAKAWA KOJI 2009-05-21 US disclosed
US-7517466-B2 Method for manufacturing porous structure and method for forming pattern KABUSHIKI KAISHA TOSHIBA (JP) 2009-04-14 US disclosed
US-7090784-B2 Forming pattern using graft polymer containing metal particles; overcoating substrates; removal polymer KABUSHIKI KAISHA TOSHIBA (JP) 2006-08-15 US disclosed
US-20060160014-A1 Photosensitive composition for interlayer dielectric and method of forming patterned interlayer dielectric NAGAHARA TATSURO 2006-07-20 US disclosed
US-20050287469-A1 Photosensitive composition for interlayer dielectric and method of forming patterned interlayer dielectric NAGAHARA TATSURO 2005-12-29 US disclosed
EP-1560069-A1 PHOTOSENSITIVE COMPOSITION FOR INTERLAYER DIELECTRIC AND METHOD OF FORMING PATTERNED INTERLAYER DIELECTRIC AZ Electronic Materials (Japan) K.K. (JP) 2005-08-03 EP disclosed
EP-1548499-A1 PHOTOSENSITIVE COMPOSITION FOR INTERLAYER DIELECTRIC AND METHOD OF FORMING PATTERNED INTERLAYER DIELECTRIC AZ Electronic Materials (Japan) K.K. (JP) 2005-06-29 EP disclosed
US-20040081912-A1 Photosensitive polysilazane composition and method of forming patterned polysilazane film AZ ELECTRONIC MATERIALS USA CORP. 2004-04-29 US disclosed
US-20040050816-A1 Forming pattern using graft polymer containing metal particles; overcoating substrates; removal polymer KABUSHIKI KAISHA TOSHIBA (JP) 2004-03-18 US disclosed
US-20030222048-A1 Method for manufacturing porous structure and method for forming pattern KABUSHIKI KAISHA TOSHIBA (JP) 2003-12-04 US disclosed
US-6565763-B1 Method for manufacturing porous structure and method for forming pattern KABUSHIKI KAISHA TOSHIBA (JP) 2003-05-20 US disclosed
EP-1164435-A1 PHOTOSENSITIVE POLYSILAZANE COMPOSITION AND METHOD OF FORMING PATTERNED POLYSILAZANE FILM TonenGeneral Sekiyu K.K. (JP) 2001-12-19 EP disclosed