SCHEMBL61039

SCHEMBL61039

[Al+3].[As-3].[As-3].[In+3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL135574 0.87
SCHEMBL138233 0.87
Arsenic SCHEMBL9551928 0.87
SCHEMBL61699 0.87
SCHEMBL6895169 0.87
SCHEMBL59870 0.82
SCHEMBL30100589 0.82
SCHEMBL28318 0.82
SCHEMBL6935631 0.78
SCHEMBL107610 0.78

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 7993 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12025555-B2 Meta-surface photodetector SENSIRION AG (CH) 2024-07-02 US claimed
CN-118263695-A Super-surface phase-change device, preparation method thereof and phase-change system 合肥美镓传感科技有限公司 2024-06-28 CN claimed
WO-2024128976-A1 METHOD OF FORMING AN INTEGRATED AVALANCHE PHOTODIODE NATIONAL UNIVERSITY OF SINGAPORE (SG) 2024-06-20 WO claimed
CN-118213770-A Metamaterial wave absorber, preparation method thereof and wave absorbing system 合肥美镓传感科技有限公司 2024-06-18 CN claimed
CN-115260456-B Quantum dot composition and light-emitting device 财团法人工业技术研究院 2024-06-04 CN claimed
CN-112654915-B Optoelectronic oscillator using monolithically integrated multiple quantum well lasers and phase modulators 协同微波公司 2024-05-28 CN claimed
EP-3144979-B1 ANTIMONIDE-BASED HIGH BANDGAP TUNNEL JUNCTION FOR SEMICONDUCTOR DEVICES BOEING CO (US) 2024-05-08 EP claimed
CN-111989571-B Biosensor comprising linker material and quantum dot beads and target antigen detection method using the same 杰宜斯科技有限公司 2024-04-12 CN claimed
CN-117855298-A Back incidence high-speed photoelectric detector based on artificial sub-wavelength microstructure 清华大学 2024-04-09 CN claimed
CN-117766461-A InGaAs wafer and manufacturing method thereof, and radio frequency array chip and manufacturing method thereof 广东省大湾区集成电路与系统应用研究院 2024-03-26 CN claimed
US-4764796-A Heterojunction field effect transistor with two-dimensional electron layer SUMITOMO ELECTRIC INDUSTRIES, LTD. (JP) 1988-08-16 US claimed
EP-0124256-B1 MESFETS AND METHODS OF MANUFACTURING MESFETS FUJITSU LIMITED (JP) 1988-06-01 EP claimed
US-4745449-A Integrated electronics suitable for optical communications AMERICAN TELEPHONE AND TELEGRAPH COMPANY, AT&T BELL LABORATORIES (US) 1988-05-17 US claimed
EP-0130774-B1 PROCESS FOR FABRICATING BIPOLAR TRANSISTOR FUJITSU LIMITED (JP) 1987-09-16 EP claimed
US-4689115-A Gaseous etching process AMERICAN TELEPHONE AND TELEGRAPH COMPANY, AT&T BELL LABORATORIES (US) 1987-08-25 US claimed
EP-0228624-A2 Field effect transistor SUMITOMO ELECTRIC INDUSTRIES, LTD. (JP) 1987-07-15 EP claimed
EP-0221103-A1 PROCESS FOR MAKING SEMICONDUCTOR DEVICES WHICH INVOLVE GASEOUS ETCHING. AMERICAN TELEPHONE & TELEGRAPH (US) 1987-05-13 EP claimed
WO-1986006546-A1 PROCESS FOR MAKING SEMICONDUCTOR DEVICES WHICH INVOLVE GASEOUS ETCHING AMERICAN TELEPHONE & TELEGRAPH COMPANY (US) 1986-11-06 WO claimed
EP-0130774-A1 Process for fabricating bipolar transistor FUJITSU LIMITED (JP) 1985-01-09 EP claimed
EP-0124256-A1 MESFETs and methods of manufacturing MESFETs FUJITSU LIMITED (JP) 1984-11-07 EP claimed