SCHEMBL6935631

SCHEMBL6935631

[Al+3].[Al+3].[As-3].[As-3].[As-3].[Ga+3].[Ga+3].[In+3].[In+3].[N-3].[N-3].[N-3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12003675 0.91
SCHEMBL141586 0.89
SCHEMBL18097 0.89
SCHEMBL138233 0.89
SCHEMBL132332 0.89
SCHEMBL61699 0.89
Ammonia Solution, Strong SCHEMBL17684981 0.80
Zinc Ion SCHEMBL504004 0.80
SCHEMBL2838965 0.80
SCHEMBL766543 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20030122130-A1 Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate having a mechanical decoupling layer MOTOROLA, INC. (US) 2003-07-03 US claimed
EP-1038322-A1 HIGH-EFFICIENCY SOLAR CELL AND METHOD FOR FABRICATION Sandia Corporation (US) 2000-09-27 EP claimed
US-5944913-A P-N JUNCTIONS, STACKED SEMICONDUCTORS WITH CRYSTALLIZATION SANDIA CORPORATION (US) 1999-08-31 US claimed
WO-1999027587-A1 HIGH-EFFICIENCY SOLAR CELL AND METHOD FOR FABRICATION SANDIA CORPORATION (US) 1999-06-03 WO claimed
EP-1038322-A1 HIGH-EFFICIENCY SOLAR CELL AND METHOD FOR FABRICATION Sandia Corporation (US) 2000-09-27 EP disclosed
US-5944913-A P-N JUNCTIONS, STACKED SEMICONDUCTORS WITH CRYSTALLIZATION SANDIA CORPORATION (US) 1999-08-31 US disclosed
WO-1999027587-A1 HIGH-EFFICIENCY SOLAR CELL AND METHOD FOR FABRICATION SANDIA CORPORATION (US) 1999-06-03 WO disclosed
US-5805624-A Long-wavelength infra-red vertical cavity surface-emitting laser on a gallium arsenide substrate HEWLETT-PACKARD COMPANY (US) 1998-09-08 US disclosed
EP-0822630-A1 A long-wavelength infra-red vertical cavity surface-emitting laser on a gallium arsenide substrate Hewlett-Packard Company (US) 1998-02-04 EP disclosed