Predicted protein targets (top 13)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.38 |
| ▸ | FAAH | O00519 | 1/20 | 0.33 |
| ▸ | HDAC3 | O15379 | 3/20 | 0.32 |
| ▸ | HDAC1 | Q13547 | 3/20 | 0.32 |
| ▸ | HDAC2 | Q92769 | 3/20 | 0.32 |
| ▸ | HDAC8 | Q9BY41 | 3/20 | 0.32 |
| ▸ | HDAC6 | Q9UBN7 | 1/20 | 0.32 |
| ▸ | CES2 | O00748 | 1/20 | 0.32 |
| ▸ | CES1 | P23141 | 1/20 | 0.32 |
| ▸ | DGKA | P23743 | 1/20 | 0.31 |
| ▸ | CTSD | P07339 | 1/20 | 0.31 |
| ▸ | FFAR3 | O14843 | 2/20 | 0.31 |
| ▸ | TSHR | P16473 | 2/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL31434757 | 1.00 | ALDH1A1 (0.38) | ALDH1A1FAAHHDAC3HDAC1HDAC2 | |
| SCHEMBL30469216 | 0.98 | ALDH1A1 (0.39) | ALDH1A1FAAHHDAC3HDAC1HDAC2 | |
| SCHEMBL21570578 | 0.96 | ALDH1A1 (0.38) | ALDH1A1FAAHHDAC3HDAC1HDAC2 | |
| SCHEMBL4151255 | 0.96 | ALDH1A1 (0.38) | ALDH1A1FAAHHDAC3HDAC1HDAC2 | |
| SCHEMBL5441284 | 0.89 | FAAH (0.39) | ALDH1A1FAAHCES2CES1DGKA | |
| SCHEMBL487230 | 0.89 | FAAH (0.39) | ALDH1A1FAAHCES2CES1DGKA | |
| SCHEMBL31117611 | 0.88 | ALDH1A1 (0.38) | ALDH1A1FAAHHDAC3HDAC1HDAC2 | |
| SCHEMBL4138222 | 0.88 | FFAR3 (0.38) | ALDH1A1HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL5973893 | 0.88 | FFAR3 (0.38) | ALDH1A1HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL20679055 | 0.86 | ALDH1A1 (0.37) | ALDH1A1FAAHHDAC3HDAC1HDAC2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-121586750-A | Composition for forming silicon-containing underlayer film for directional self-assembly | 日产化学株式会社 | 2026-02-27 | — | — | CN | disclosed |
| CN-113785243-B | Composition for resist pattern metallization process | 日产化学株式会社 | 2025-05-02 | — | — | CN | disclosed |
| CN-119768742-A | Composition for forming silicon-containing resist underlayer film | 日产化学株式会社 | 2025-04-04 | — | — | CN | disclosed |
| CN-119563142-A | Composition for forming silicon-containing resist underlayer film containing multifunctional sulfonic acid | 日产化学株式会社 | 2025-03-04 | — | — | CN | disclosed |
| CN-119487453-A | Method for manufacturing laminate and method for manufacturing semiconductor element | 日产化学株式会社 | 2025-02-18 | — | — | CN | disclosed |
| US-20240419073-A1 | ADDITIVE-CONTAINING SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2024-12-19 | — | — | US | disclosed |
| WO-2024063044-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | 日産化学株式会社 | 2024-03-28 | — | — | WO | disclosed |
| WO-2024019064-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYFUNCTIONAL SULFONIC ACID | 日産化学株式会社 | 2024-01-25 | — | — | WO | disclosed |
| WO-2024009993-A1 | METHOD OF MANUFACTURING LAMINATE AND METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT | 日産化学株式会社 | 2024-01-11 | — | — | WO | disclosed |
| WO-2024004323-A1 | CURABLE COMPOSITION | 日産化学株式会社 | 2024-01-04 | — | — | WO | disclosed |
| WO-2022230940-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | 日産化学株式会社 | 2022-11-03 | — | — | WO | disclosed |
| WO-2022210954-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| WO-2022210901-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| WO-2022210944-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| WO-2022210960-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING UNDERLAYER FILM FOR INDUCED SELF-ORGANIZATION | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| WO-2022210262-A1 | LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR PRODUCING PROCESSED SEMICONDUCTOR SUBSTRATE | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| EP-1117102-B1 | Method of manufacturing material for forming insulating film | JSR CORP (JP) | 2005-08-10 | — | — | EP | disclosed |
| US-6642352-B2 | Providing a silicon inorganic polymer compound or polyarylenes or polyphenylene ether organic polymer compound, treating the polymeric compound with a zeta-potential producing filter material, and producing curable polymer compound | JSR CORPORATION (JP) | 2003-11-04 | — | — | US | disclosed |
| EP-1295924-A2 | Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor | JSR Corporation (JP) | 2003-03-26 | — | — | EP | disclosed |
| US-20010009936-A1 | Method of manufacturing material for forming insulating film | JSR CORPORATION (JP) | 2001-07-26 | — | — | US | disclosed |