Triaziquone

Triaziquone

SCHEMBL6138445

CCC(C(C)=O)C(=O)O.O=C1C=C(N2CC2)C(=O)C(N2CC2)=C1N1CC1.[Ti]

nearest known ligand 0.38

Full drug profile on Sugi Atlas →

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
DNMT1 P26358 1/20 0.38
TP53 P04637 1/20 0.33
MAPT P10636 1/20 0.33
STAT3 P40763 1/20 0.33
HTT P42858 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
NSD2 O96028 3/20 0.33
APAF1 O14727 2/20 0.33
TDP2 O95551 2/20 0.33
HKDC1 Q2TB90 2/20 0.33
TTR P02766 1/20 0.32
MEN1 O00255 1/20 0.31
NPC1 O15118 1/20 0.31
RAB9A P51151 1/20 0.31
GALK1 P51570 1/20 0.31
BLM P54132 1/20 0.31
KMT2A Q03164 1/20 0.31
ATM Q13315 1/20 0.31
NOD2 Q9HC29 1/20 0.31
ATG4B Q9Y4P1 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Triaziquone SCHEMBL424867 0.99 DNMT1 (0.39) DNMT1TP53MAPTSTAT3HTT
Triaziquone SCHEMBL5974054 0.97 DNMT1 (0.38) DNMT1TP53MAPTSTAT3HTT
Triaziquone SCHEMBL3086309 0.97 DNMT1 (0.38) DNMT1TP53MAPTSTAT3HTT
Triaziquone SCHEMBL23174808 0.88 DNMT1 (0.37) DNMT1TP53MAPTSTAT3HTT
Triaziquone SCHEMBL17041892 0.88 DNMT1 (0.37) DNMT1TP53MAPTSTAT3HTT
Triaziquone SCHEMBL6381180 0.88 DNMT1 (0.34) DNMT1TP53MAPTSTAT3HTT
Triaziquone SCHEMBL7946775 0.87 DNMT1 (0.33) DNMT1TP53MAPTSTAT3HTT
Triaziquone SCHEMBL8491679 0.86 NSD2 (0.33) DNMT1TP53MAPTSTAT3HTT
Triaziquone SCHEMBL7545576 0.85 NSD2 (0.32) DNMT1TP53MAPTSTAT3HTT
Triaziquone SCHEMBL6848459 0.84 GPR84 (0.34) DNMT1TP53MAPTSTAT3HTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 36 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-121586750-A Composition for forming silicon-containing underlayer film for directional self-assembly 日产化学株式会社 2026-02-27 CN disclosed
CN-113785243-B Composition for resist pattern metallization process 日产化学株式会社 2025-05-02 CN disclosed
US-20240199924-A1 LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR MANUFACTURING PROCESSED SEMICONDUCTOR SUBSTRATE NISSAN CHEMICAL CORPORATION (JP) 2024-06-20 US disclosed
CN-118159910-A Additive-containing silicon-containing resist underlayer film forming composition 日产化学株式会社 2024-06-07 CN disclosed
CN-117776546-A Anti-reflection glass 福美化学工业株式会社 2024-03-29 CN disclosed
WO-2024063044-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM 日産化学株式会社 2024-03-28 WO disclosed
CN-117716295-A Composition for forming silicon-containing resist underlayer film and silicon-containing resist underlayer film 日产化学株式会社 2024-03-15 CN disclosed
CN-117460995-A Composition for forming underlayer film of silicon-containing resist 日产化学株式会社 2024-01-26 CN disclosed
WO-2024019064-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYFUNCTIONAL SULFONIC ACID 日産化学株式会社 2024-01-25 WO disclosed
CN-117425632-A Anti-reflection glass 福美化学工业株式会社 2024-01-19 CN disclosed
CN-115362216-A Film-forming composition 日产化学株式会社 2022-11-18 CN disclosed
CN-115016230-A Composition for forming silicon-containing resist underlayer film 日产化学工业株式会社 2022-09-06 CN disclosed
CN-107235643-B Method for manufacturing high anti-reflection reinforced glass 福美化学工业株式会社 2022-04-05 CN disclosed
CN-112947000-A Composition for forming silicon-containing EUV resist underlayer film containing sulfonic acid/salt 日产化学工业株式会社 2021-06-11 CN disclosed
CN-112558410-A Composition for forming silicon-containing resist underlayer film having organic group containing aliphatic polycyclic structure 日产化学工业株式会社 2021-03-26 CN disclosed
CN-107209460-B Composition for forming resist underlayer film for lithography containing hydrolyzable silane having carbonate skeleton 日产化学工业株式会社 2020-12-18 CN disclosed
WO-2020085508-A1 FILM-FORMING COMPOSITION 日産化学株式会社 2020-04-30 WO disclosed
EP-1117102-B1 Method of manufacturing material for forming insulating film JSR CORP (JP) 2005-08-10 EP disclosed
EP-1494072-A2 Radiation sensitive refractive index changing composition, pattern forming method and optical material JSR Corporation (JP) 2005-01-05 EP disclosed
EP-1117102-A2 Method of manufacturing material for forming insulating film JSR Corporation (JP) 2001-07-18 EP disclosed