SCHEMBL6139858

SCHEMBL6139858

CCc1ccc(S(=O)(=O)[O-])cc1.CN(C)c1cccc([S+](c2cccc(N(C)C)c2)c2cccc(N(C)C)c2)c1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA2 P00918 4/20 0.39
ALDH1A1 P00352 2/20 0.39
GAA P10253 1/20 0.39
CLTC Q00610 1/20 0.38
CA1 P00915 3/20 0.38
CA9 Q16790 3/20 0.38
CA12 O43570 1/20 0.38
CA4 P22748 1/20 0.38
CA7 P43166 1/20 0.36
HPGD P15428 1/20 0.35
CNR2 P34972 1/20 0.34
HDAC1 Q13547 1/20 0.34
HDAC6 Q9UBN7 1/20 0.34
HTR2A P28223 1/20 0.34
HTR2C P28335 1/20 0.34
POLB P06746 2/20 0.34
KDM4E B2RXH2 1/20 0.33
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
ADAMTS4 O75173 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6140796 0.84 CA12 (0.44) CA2ALDH1A1GAACA1CA9
SCHEMBL6140880 0.82 CA2 (0.46) CA2ALDH1A1CLTCCA1CA9
SCHEMBL3182561 0.76 CA2 (0.46) CA2ALDH1A1GAAPOLBKDM4E
SCHEMBL6140043 0.73 CA12 (0.38) CA2ALDH1A1GAACA1CA9
Potassium Ion SCHEMBL28903870 0.73 CA2 (0.61) CA2ALDH1A1HPGDKDM4EKMT2A
SCHEMBL1589447 0.73 CA2 (0.61) CA2ALDH1A1HPGDKDM4EKMT2A
SCHEMBL1563238 0.73 CA2 (0.61) CA2ALDH1A1HPGDKDM4EKMT2A
SCHEMBL29053373 0.73 CA2 (0.61) CA2ALDH1A1HPGDKDM4EKMT2A
SCHEMBL28483116 0.73 CA2 (0.61) CA2ALDH1A1HPGDKDM4EKMT2A
SCHEMBL451007 0.73 CA2 (0.61) CA2ALDH1A1HPGDKDM4EKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6955939-B1 Memory element formation with photosensitive polymer dielectric ADVANCED MICRO DEVICES, INC. (US) 2005-10-18 US disclosed
US-6878961-B2 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. (US) 2005-04-12 US disclosed
US-20050045877-A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS MORGAN STANLEY SENIOR FUNDING, INC. 2005-03-03 US disclosed
US-6825060-B1 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. 2004-11-30 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 US disclosed