SCHEMBL6140880

SCHEMBL6140880

CCc1ccc(S(=O)(=O)[O-])cc1.CN(C)c1ccc([S+](c2ccc(N(C)C)cc2)c2ccc(N(C)C)cc2)cc1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA2 P00918 8/20 0.46
CA9 Q16790 7/20 0.46
CA1 P00915 5/20 0.46
CA7 P43166 1/20 0.46
ALDH1A1 P00352 4/20 0.40
HPGD P15428 2/20 0.40
ALOX15 P16050 2/20 0.40
TSHR P16473 2/20 0.40
KDM4E B2RXH2 1/20 0.40
HSD17B10 Q99714 1/20 0.40
CYP3A4 P08684 1/20 0.40
MAPK1 P28482 1/20 0.40
TDP1 Q9NUW8 1/20 0.40
CA12 O43570 4/20 0.40
CA4 P22748 2/20 0.40
CNR2 P34972 1/20 0.40
CLTC Q00610 1/20 0.39
MEN1 O00255 1/20 0.37
NPC1 O15118 1/20 0.37
POLB P06746 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6140762 0.87 CA2 (0.37) CA2CA9CA1CA7ALDH1A1
SCHEMBL6140127 0.87 CA2 (0.37) CA2CA9CA1CA7ALDH1A1
SCHEMBL6139858 0.82 CA2 (0.39) CA2CA9CA1CA7ALDH1A1
SCHEMBL6140061 0.82 ALDH1A1 (0.53) CA2CA9CA1CA7ALDH1A1
SCHEMBL3182561 0.81 CA2 (0.46) CA2ALDH1A1KDM4EMAPK1TDP1
SCHEMBL8628796 0.81 APP (0.44) CA2CA9CA1CA7ALDH1A1
SCHEMBL6140382 0.78 ALDH1A1 (0.43) CA2CA9CA1CA7ALDH1A1
SCHEMBL451007 0.77 CA2 (0.61) CA2ALDH1A1HPGDKDM4EKMT2A
SCHEMBL1563238 0.77 CA2 (0.61) CA2ALDH1A1HPGDKDM4ETDP1
SCHEMBL1589447 0.77 CA2 (0.61) CA2ALDH1A1HPGDKDM4EKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6955939-B1 Memory element formation with photosensitive polymer dielectric ADVANCED MICRO DEVICES, INC. (US) 2005-10-18 US disclosed
US-6878961-B2 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. (US) 2005-04-12 US disclosed
US-20050045877-A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS MORGAN STANLEY SENIOR FUNDING, INC. 2005-03-03 US disclosed
US-6825060-B1 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. 2004-11-30 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 US disclosed