SCHEMBL6140135

SCHEMBL6140135

Cc1ccc(S(=O)(=O)[O-])c(C)c1.c1ccc(COc2cccc([S+](c3cccc(OCc4ccccn4)c3)c3cccc(OCc4ccccn4)c3)c2)nc1

nearest known ligand 0.48

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
TLR4 O00206 1/20 0.41
TLR2 O60603 1/20 0.41
SYK P43405 5/20 0.39
MAOA P21397 1/20 0.38
MEN1 O00255 1/20 0.38
KMT2A Q03164 1/20 0.38
KDM4E B2RXH2 2/20 0.37
TDP1 Q9NUW8 1/20 0.37
PARP10 Q53GL7 1/20 0.37
HTR5A P47898 1/20 0.36
SMN1; SMN2 Q16637 2/20 0.36
LMNA P02545 1/20 0.36
HTT P42858 1/20 0.36
FFAR1 O14842 1/20 0.36
ALDH1A1 P00352 1/20 0.36
AURKB Q96GD4 1/20 0.36
INCENP Q9NQS7 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6140321 0.92 SYK (0.36) TLR4TLR2SYKMAOAKMT2A
SCHEMBL6140541 0.90 PARP10 (0.44) SYKMAOAMEN1KMT2AKDM4E
SCHEMBL6140596 0.88 TLR4 (0.45) TLR4TLR2SYKMAOAKDM4E
SCHEMBL6140422 0.87 KMT2A (0.39) SYKKMT2AKDM4ETDP1PARP10
SCHEMBL6140453 0.84 NOS3 (0.45) TLR4TLR2MAOAMEN1KMT2A
SCHEMBL6140502 0.84 PARP10 (0.39) SYKMAOAMEN1KMT2AKDM4E
SCHEMBL6140166 0.84 PARP10 (0.39) SYKMAOAMEN1KMT2AKDM4E
SCHEMBL6140456 0.82 TLR4 (0.47) TLR4TLR2SYKMAOAMEN1
SCHEMBL6140822 0.82 SMN1; SMN2 (0.39) TLR4TLR2SYKMAOAKDM4E
SCHEMBL6140741 0.82 SMN1; SMN2 (0.39) TLR4TLR2SYKMAOAKDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6955939-B1 Memory element formation with photosensitive polymer dielectric ADVANCED MICRO DEVICES, INC. (US) 2005-10-18 US disclosed
US-6878961-B2 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. (US) 2005-04-12 US disclosed
US-20050045877-A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS MORGAN STANLEY SENIOR FUNDING, INC. 2005-03-03 US disclosed
US-6825060-B1 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. 2004-11-30 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 US disclosed