SCHEMBL6140422

SCHEMBL6140422

CC(C)(C)OC(=O)COc1ccc([S+](c2cccc(OCc3ccccn3)c2)c2cccc(OCc3ccccn3)c2)cc1.Cc1ccc(S(=O)(=O)[O-])c(C)c1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 1/20 0.39
MAPT P10636 3/20 0.39
SMN1; SMN2 Q16637 2/20 0.39
POLB P06746 1/20 0.37
KDM4E B2RXH2 2/20 0.37
RAPGEF3 O95398 1/20 0.37
TDP1 Q9NUW8 1/20 0.37
PARP10 Q53GL7 1/20 0.37
NPC1 O15118 2/20 0.36
RAB9A P51151 2/20 0.36
ALDH1A1 P00352 1/20 0.36
PTPN1 P18031 1/20 0.35
HDAC3 O15379 1/20 0.35
HDAC4 P56524 1/20 0.35
HDAC1 Q13547 1/20 0.35
HDAC7 Q8WUI4 1/20 0.35
HDAC2 Q92769 1/20 0.35
HDAC10 Q969S8 1/20 0.35
HDAC11 Q96DB2 1/20 0.35
HDAC8 Q9BY41 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6140092 0.92 POLB (0.41) KMT2AMAPTSMN1; SMN2POLBKDM4E
SCHEMBL6140499 0.92 POLB (0.41) KMT2AMAPTSMN1; SMN2POLBKDM4E
SCHEMBL6140299 0.90 KMT2A (0.44) KMT2AMAPTSMN1; SMN2POLBKDM4E
SCHEMBL6140200 0.89 POLB (0.42) KMT2ASMN1; SMN2POLBKDM4EPARP10
SCHEMBL6140143 0.88 RORC (0.40) MAPTSMN1; SMN2KDM4ERAPGEF3TDP1
SCHEMBL6140432 0.88 RORC (0.40) MAPTSMN1; SMN2KDM4ERAPGEF3TDP1
SCHEMBL6140321 0.88 SYK (0.36) KMT2ASMN1; SMN2KDM4ERAPGEF3TDP1
SCHEMBL6140146 0.87 MAPT (0.41) KMT2AMAPTSMN1; SMN2KDM4ERAPGEF3
SCHEMBL6140135 0.87 TLR4 (0.41) KMT2ASMN1; SMN2KDM4ETDP1PARP10
SCHEMBL6140145 0.87 POLB (0.41) KMT2AMAPTSMN1; SMN2POLBPARP10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6955939-B1 Memory element formation with photosensitive polymer dielectric ADVANCED MICRO DEVICES, INC. (US) 2005-10-18 US disclosed
US-6878961-B2 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. (US) 2005-04-12 US disclosed
US-20050045877-A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS MORGAN STANLEY SENIOR FUNDING, INC. 2005-03-03 US disclosed
US-6825060-B1 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. 2004-11-30 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 US disclosed