Known targets — ChEMBL curated mechanism
CHRM1CHRM2CHRM3CHRM4CHRM5SLC6A2dacAdacBdacCftsImrcAmrcBmrdA
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 1/20 | 0.44 |
| ▸ | LMNA | P02545 | 3/20 | 0.44 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.44 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.44 |
| ▸ | GPR119 | Q8TDV5 | 2/20 | 0.41 |
| ▸ | RORC | P51449 | 1/20 | 0.40 |
| ▸ | ADAMTS4 | O75173 | 1/20 | 0.40 |
| ▸ | MMP13 | P45452 | 1/20 | 0.40 |
| ▸ | MAOB | P27338 | 1/20 | 0.40 |
| ▸ | MAPK14 | Q16539 | 1/20 | 0.39 |
| ▸ | HTT | P42858 | 1/20 | 0.39 |
| ▸ | PSEN1 | P49768 | 1/20 | 0.39 |
| ▸ | PSEN2 | P49810 | 1/20 | 0.39 |
| ▸ | APH1B | Q8WW43 | 1/20 | 0.39 |
| ▸ | NCSTN | Q92542 | 1/20 | 0.39 |
| ▸ | APH1A | Q96BI3 | 1/20 | 0.39 |
| ▸ | PSENEN | Q9NZ42 | 1/20 | 0.39 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.38 |
| ▸ | MEN1 | O00255 | 1/20 | 0.38 |
| ▸ | GAA | P10253 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6140591 | 1.00 | TSHR (0.44) | TSHRLMNASMN1; SMN2ALDH1A1GPR119 | |
| SCHEMBL6140463 | 0.93 | F2 (0.41) | TSHRLMNASMN1; SMN2ALDH1A1GPR119 | |
| SCHEMBL6140576 | 0.93 | F2 (0.41) | TSHRLMNASMN1; SMN2ALDH1A1GPR119 | |
| SCHEMBL6140690 | 0.92 | PTPN1 (0.44) | TSHRLMNASMN1; SMN2ALDH1A1GPR119 | |
| SCHEMBL6140091 | 0.92 | PTPN1 (0.44) | TSHRLMNASMN1; SMN2ALDH1A1GPR119 | |
| SCHEMBL6140500 | 0.90 | RORC (0.41) | TSHRLMNASMN1; SMN2ALDH1A1GPR119 | |
| SCHEMBL6140111 | 0.90 | RORC (0.43) | TSHRLMNASMN1; SMN2ALDH1A1GPR119 | |
| SCHEMBL8069405 | 0.89 | PSEN1 (0.46) | LMNASMN1; SMN2HTTPSEN1PSEN2 | |
| SCHEMBL8862147 | 0.89 | PSEN1 (0.46) | LMNASMN1; SMN2HTTPSEN1PSEN2 | |
| SCHEMBL8862192 | 0.89 | PSEN1 (0.46) | LMNASMN1; SMN2HTTPSEN1PSEN2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6955939-B1 | Memory element formation with photosensitive polymer dielectric | ADVANCED MICRO DEVICES, INC. (US) | 2005-10-18 | — | — | US | disclosed |
| US-6878961-B2 | Photosensitive polymeric memory elements | ADVANCED MICRO DEVICES, INC. (US) | 2005-04-12 | — | — | US | disclosed |
| US-20050045877-A1 | PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS | MORGAN STANLEY SENIOR FUNDING, INC. | 2005-03-03 | — | — | US | disclosed |
| US-6825060-B1 | Photosensitive polymeric memory elements | ADVANCED MICRO DEVICES, INC. | 2004-11-30 | — | — | US | disclosed |
| US-6534243-B1 | A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature | ADVANCED MICRO DEVICES, INC. | 2003-03-18 | — | — | US | disclosed |
| US-6492075-B1 | COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST | ADVANCED MICRO DEVICES, INC. | 2002-12-10 | — | — | US | disclosed |
| US-6274289-B1 | Chemical resist thickness reduction process | ADVANCED MICRO DEVICES, INC. | 2001-08-14 | — | — | US | disclosed |
| US-5847218-A | Sulfonium salts and chemically amplified positive resist compositions | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1998-12-08 | — | — | US | disclosed |