Known targets — ChEMBL curated mechanism
CHRM1CHRM2CHRM3CHRM4CHRM5SLC6A2dacAdacBdacCftsImrcAmrcBmrdA
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | F2 | P00734 | 4/20 | 0.41 |
| ▸ | TSHR | P16473 | 1/20 | 0.39 |
| ▸ | LMNA | P02545 | 3/20 | 0.39 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.39 |
| ▸ | MAOB | P27338 | 1/20 | 0.39 |
| ▸ | RORC | P51449 | 1/20 | 0.38 |
| ▸ | NOS3 | P29474 | 1/20 | 0.38 |
| ▸ | NOS1 | P29475 | 1/20 | 0.38 |
| ▸ | NOS2 | P35228 | 1/20 | 0.38 |
| ▸ | MAPK14 | Q16539 | 1/20 | 0.37 |
| ▸ | HTT | P42858 | 1/20 | 0.36 |
| ▸ | GPR119 | Q8TDV5 | 1/20 | 0.36 |
| ▸ | PSEN1 | P49768 | 1/20 | 0.36 |
| ▸ | PSEN2 | P49810 | 1/20 | 0.36 |
| ▸ | APH1B | Q8WW43 | 1/20 | 0.36 |
| ▸ | NCSTN | Q92542 | 1/20 | 0.36 |
| ▸ | APH1A | Q96BI3 | 1/20 | 0.36 |
| ▸ | PSENEN | Q9NZ42 | 1/20 | 0.36 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6140576 | 1.00 | F2 (0.41) | F2TSHRLMNASMN1; SMN2ALDH1A1 | |
| SCHEMBL6140165 | 0.94 | PTPN1 (0.40) | F2TSHRLMNASMN1; SMN2ALDH1A1 | |
| SCHEMBL6140482 | 0.93 | TSHR (0.44) | TSHRLMNASMN1; SMN2ALDH1A1MAOB | |
| SCHEMBL6140591 | 0.93 | TSHR (0.44) | TSHRLMNASMN1; SMN2ALDH1A1MAOB | |
| SCHEMBL6140143 | 0.92 | RORC (0.40) | F2TSHRLMNASMN1; SMN2ALDH1A1 | |
| SCHEMBL6140432 | 0.92 | RORC (0.40) | F2TSHRLMNASMN1; SMN2ALDH1A1 | |
| SCHEMBL6140690 | 0.88 | PTPN1 (0.44) | F2TSHRLMNASMN1; SMN2ALDH1A1 | |
| SCHEMBL6140091 | 0.88 | PTPN1 (0.44) | F2TSHRLMNASMN1; SMN2ALDH1A1 | |
| SCHEMBL6140092 | 0.88 | POLB (0.41) | F2LMNASMN1; SMN2ALDH1A1HTT | |
| SCHEMBL6140499 | 0.88 | POLB (0.41) | F2LMNASMN1; SMN2ALDH1A1HTT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6955939-B1 | Memory element formation with photosensitive polymer dielectric | ADVANCED MICRO DEVICES, INC. (US) | 2005-10-18 | — | — | US | disclosed |
| US-6878961-B2 | Photosensitive polymeric memory elements | ADVANCED MICRO DEVICES, INC. (US) | 2005-04-12 | — | — | US | disclosed |
| US-20050045877-A1 | PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS | MORGAN STANLEY SENIOR FUNDING, INC. | 2005-03-03 | — | — | US | disclosed |
| US-6825060-B1 | Photosensitive polymeric memory elements | ADVANCED MICRO DEVICES, INC. | 2004-11-30 | — | — | US | disclosed |
| US-6534243-B1 | A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature | ADVANCED MICRO DEVICES, INC. | 2003-03-18 | — | — | US | disclosed |
| US-6492075-B1 | COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST | ADVANCED MICRO DEVICES, INC. | 2002-12-10 | — | — | US | disclosed |
| US-6274289-B1 | Chemical resist thickness reduction process | ADVANCED MICRO DEVICES, INC. | 2001-08-14 | — | — | US | disclosed |
| US-5847218-A | Sulfonium salts and chemically amplified positive resist compositions | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1998-12-08 | — | — | US | disclosed |