⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9353035 | 1.00 | — | — | |
| SCHEMBL6158213 | 0.82 | — | — | |
| SCHEMBL3908469 | 0.82 | — | — | |
| SCHEMBL7643291 | 0.78 | CES2 (0.50) | — | |
| SCHEMBL9436942 | 0.78 | — | — | |
| SCHEMBL1537305 | 0.73 | — | — | |
| SCHEMBL726626 | 0.73 | — | — | |
| SCHEMBL6160149 | 0.73 | — | — | |
| SCHEMBL6160151 | 0.73 | — | — | |
| SCHEMBL27493623 | 0.73 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10651286-B2 | High selectivity nitride removal process based on selective polymer deposition | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2020-05-12 | — | — | US | disclosed |
| US-20190305109-A1 | HIGH SELECTIVITY NITRIDE REMOVAL PROCESS BASED ON SELECTIVE POLYMER DEPOSITION | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2019-10-03 | — | — | US | disclosed |
| US-10325998-B2 | High selectivity nitride removal process based on selective polymer deposition | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2019-06-18 | — | — | US | disclosed |
| US-10269924-B2 | High selectivity nitride removal process based on selective polymer deposition | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2019-04-23 | — | — | US | disclosed |
| US-20170194497-A1 | HIGH SELECTIVITY NITRIDE REMOVAL PROCESS BASED ON SELECTIVE POLYMER DEPOSITION | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2017-07-06 | — | — | US | disclosed |
| US-20170194457-A1 | HIGH SELECTIVITY NITRIDE REMOVAL PROCESS BASED ON SELECTIVE POLYMER DEPOSITION | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2017-07-06 | — | — | US | disclosed |
| US-9633948-B2 | Low energy etch process for nitrogen-containing dielectric layer | GLOBALFOUNDRIES INC. (KY) | 2017-04-25 | — | — | US | disclosed |
| US-9627533-B2 | High selectivity nitride removal process based on selective polymer deposition | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2017-04-18 | — | — | US | disclosed |
| US-20160233335-A1 | HIGH SELECTIVITY NITRIDE REMOVAL PROCESS BASED ON SELECTIVE POLYMER DEPOSITION | ZEON CORPORATION (JP) | 2016-08-11 | — | — | US | disclosed |
| US-20160111374-A1 | LOW ENERGY ETCH PROCESS FOR NITROGEN-CONTAINING DIELECTRIC LAYER | GLOBALFOUNDRIES U.S. INC. | 2016-04-21 | — | — | US | disclosed |
| US-8765613-B2 | High selectivity nitride etch process | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2014-07-01 | — | — | US | disclosed |
| US-20130105996-A1 | LOW ENERGY ETCH PROCESS FOR NITROGEN-CONTAINING DIELECTRIC LAYER | ZEON CORPORATION (JP) | 2013-05-02 | — | — | US | disclosed |
| US-20130105916-A1 | HIGH SELECTIVITY NITRIDE ETCH PROCESS | ZEON CORPORATION (JP) | 2013-05-02 | — | — | US | disclosed |
| WO-2013063182-A1 | HIGH SELECTIVITY NITRIDE ETCH PROCESS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2013-05-02 | — | — | WO | disclosed |
| US-20130108833-A1 | HIGH FIDELITY PATTERNING EMPLOYING A FLUOROHYDROCARBON-CONTAINING POLYMER | ZEON CORPORATION (JP) | 2013-05-02 | — | — | US | disclosed |
| EP-1191008-B1 | COMPOUND HAVING TETRAHYDRONAPHTHALENE SKELETON AND LIQUID CRYSTAL COMPOSITION CONTAINING THE SAME | DAINIPPON INK & CHEMICALS (JP) | 2005-02-09 | — | — | EP | disclosed |
| US-6746728-B1 | SUPERIOR LIQUID CRYSTALLINITY AND CO-SOLUBILITY WITH CURRENTLY USED LIQUID CRYSTAL COMPOUNDS; TEMPERATURE RANGE OVER WHICH LIQUID CRYSTALLINITY IS SHOWN IS BROAD; THRESHOLD VOLTAGE IS LOW; CAPABLE OF HIGH SPEED RESPONSE | DAINIPPON INK AND CHEMICALS, INC. (JP) | 2004-06-08 | — | — | US | disclosed |
| EP-1191008-A1 | COMPOUND HAVING TETRAHYDRONAPHTHALENE SKELETON AND LIQUID CRYSTAL COMPOSITION CONTAINING THE SAME | DAINIPPON INK AND CHEMICALS, INC. (JP) | 2002-03-27 | — | — | EP | disclosed |
| EP-0406748-B1 | Dehydrofluorination and dehydrogenation of fluorinated alkanes | ATOCHEM NORTH AMERICA (US) | 1994-09-28 | — | — | EP | disclosed |
| EP-0406748-A2 | Dehydrofluorination and dehydrogenation of fluorinated alkanes | ATOCHEM NORTH AMERICA, INC. (US) | 1991-01-09 | — | — | EP | disclosed |